ZnO flexible high voltage thin film transistors for power management in wearable electronics

Abstract

A ZnO-based flexible high voltage thin film transistor (f-HVTFT) is fabricated on a plastic substrate. The f-HVTFT shows a blocking voltage of 150 V, on-current of 170 μA, and off-current of 0.01 pA at a drain bias of 10 V. The maximum recoverable bending radius of the device reaches 11 mm, and the blocking voltage is larger than 120 V while it is under bending. The unique center-symmetric circular structure of the f-HVTFT is particularly useful to the wearable systems, which enable one to operate under bending from arbitrary directions. The ZnO-based f-HVTFT is a promising candidate to be used for power management of self-powered wearable electronic systems.

Characteristics of Offset Corbino Thin Film Transistor: A Physical Model

“…Corbino TFT is a circular TFT consisting of inner and outer concentric ring electrodes, superior to the rectangular-shaped TFT in some properties. Due to the uniform electric field distribution in the channel region, Corbino TFT can potentially work at higher drain bias [28,29] and achieve better mechanical bending stability [30,31]. In addition, the output resistance of Corbino TFT behaves almost infinitely beyond pinch-off with the outer-ring electrode as drain [32][33][34].…”

“…In contrast, research about high-voltage Corbino thin film transistors is limited [28,29]. Hong, et al, demonstrated magnesium zinc oxide (MZO) based Corbino HVTFT [28] and ZnO-based flexible Corbino HVTFT [29], which show a blocking voltage of 609 V and 150 V, respectively.…”

“…In contrast, research about high-voltage Corbino thin film transistors is limited [28,29]. Hong, et al, demonstrated magnesium zinc oxide (MZO) based Corbino HVTFT [28] and ZnO-based flexible Corbino HVTFT [29], which show a blocking voltage of 609 V and 150 V, respectively. As for the physical model of offset Corbino thin film transistor, Huo, et al, [19] gave a simplified expression of saturation voltage and saturation current for Corbino TFT with offset at the drain side.…”

Dual-active-layer InGaZnO high-voltage thin-film transistors

“…High-voltage thin-film transistors (HV-TFTs) are critical components in the areas of photovoltaics [1][2][3], display [4][5][6][7], MEMS [8], x-ray detectors [9,10], actuators [11,12], and wearable devices [13], where high-voltage is necessary either to drive the corresponding building blocks or to harvest energy as an integral part of the power source. Gate/drain offset design has been adopted to increase the breakdown voltage of silicon, organic and oxide TFTs [14][15][16].…”