ZnO/GaAs heterojunction solar cells fabricated by the ALD method

Caban, P.; Pietruszka, R.; Kopalko, K.; Witkowski, B.S.; Gwóźdź, Katarzyna; Płaczek‐Popko, E.; Godlewski, M.

doi:10.1016/j.ijleo.2017.11.063

Cited by 17 publications

(5 citation statements)

References 24 publications

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“…Some of the oxides mentioned above, such as ZnO, have been tested as an ESC for GaAs but with little or no success [102]. Nonetheless, there are several reports on the use of oxides for achieving low contact resistance for application in GaAs transistors, which can also be implemented for solar cells application [103][104][105][106].…”

Section: Metal Oxidesmentioning

confidence: 99%

Non-epitaxial carrier selective contacts for III-V solar cells: A review

Raj

Tan

Jagadish

2020

Applied Materials Today

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Section: Metal Oxidesmentioning

confidence: 99%

Non-epitaxial carrier selective contacts for III-V solar cells: A review

Raj

Tan

Jagadish

2020

Applied Materials Today

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“…Although there has been a significant effort to fabricate high-efficiency GaAs solar cells using non-epitaxial heterojunction, most of them have led to extremely low performance compared to state-of-the-art GaAs solar cells [283][284][285][286][287]. Only recently, we reported a GaAs solar cell with V oc exceeding 900 mV and efficiency exceeding 18%.…”

Section: Carrier Selective Contacts For Iii-v Solar Cellsmentioning

confidence: 95%

Topical review: pathways toward cost-effective single-junction III–V solar cells

Raj¹,

Haggrén²,

Wong³

et al. 2021

J. Phys. D: Appl. Phys.

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III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with significantly higher absorption compared to silicon. The high absorption allows for the fabrication of thin/ultra-thin solar cells, which in turn permits for the realization of lightweight, flexible, and highly efficient solar cells that can be used in many applications where rigidity and weight are an issue, such as electric vehicles, the internet of things, space technologies, remote lighting, portable electronics, etc. However, their cost is significantly higher than silicon solar cells, making them restrictive for widespread applications. Nonetheless, they remain pivotal for the continuous development of photovoltaics. Therefore, there has been a continuous worldwide effort to reduce the cost of III–V solar cells substantially. This topical review summarises current research efforts in III–V growth and device fabrication to overcome the cost barriers of III–V solar cells. We start the review with a cost analysis of the current state-of-art III–V solar cells followed by a subsequent discussion on low-cost growth techniques, substrate reuse, and emerging device technologies. We conclude the review emphasizing that to substantially reduce the cost-related challenges of III–V photovoltaics, low-cost growth technologies need to be combined synergistically with new substrate reuse techniques and innovative device designs.

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“…In total, eight GaAs samples, denoted as A1-A4 and B1-B4, were fabricated and they differed in terms of the method used for surface preparation. For half of these samples (i.e., the "B" group) the surface was cleaned and/or etched in four different ways distinguished by a numerical suffix (1)(2)(3)(4). The second half of samples (i.e., the "A" group) were prepared exactly as the ones from the "B" group (ending with the same suffix) but with an extra sulfur-passivation step utilizing a 10% ammonium sulfide (NH 4 ) 2 S aqueous solution (SA10).…”

Section: Gaas Surface Treatmentmentioning

confidence: 99%

“…Consequently, we also turned out our attention towards gallium arsenide as a substrate/absorber for solar cells. The first results of the experiments made us aware of the potential and possible fields for improvement of ZnO/GaAs-based structures [ 3 ]. Due preparation of the substrate, seems to be one of the most important aspects here as the oxide-based states of the GaAs surface are known to adversely affect device performance.…”

Section: Introductionmentioning

confidence: 99%

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

Caban¹,

Pietruszka²,

Kaszewski³

et al. 2021

Beilstein J. Nanotechnol.

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In order to effectively utilize the photovoltaic properties of gallium arsenide, its surface/interface needs to be properly prepared. In the experiments described here we examined eight different paths of GaAs surface treatment (cleaning, etching, passivation) which resulted in different external quantum efficiency (EQE) values of the tested photovoltaic (PV) cells. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) examinations were conducted to obtain structural details of the devices. X-ray photoelectron spectroscopy (XPS) with depth profiling was used to examine interface structure and changes in the elemental content and chemical bonds. The photoluminescence (PL) properties and bandgap measurements of the deposited layers were also reported. The highest EQE value was obtained for the samples initially etched with a citric acid-based etchant and, in the last preparation step, either passivated with ammonium sulfide aqueous solution or treated with ammonium hydroxide solution with no final passivation. Subsequent I–V measurements, however, confirmed that from these samples, only the sulfur-passivated ones provided the highest current density. The tested devices were fabricated by using the ALD method.

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ZnO/GaAs heterojunction solar cells fabricated by the ALD method

Cited by 17 publications

References 24 publications

Non-epitaxial carrier selective contacts for III-V solar cells: A review

Non-epitaxial carrier selective contacts for III-V solar cells: A review

Topical review: pathways toward cost-effective single-junction III–V solar cells

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

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ZnO/GaAs heterojunction solar cells fabricated by the ALD method

Cited by 17 publications

References 24 publications

Non-epitaxial carrier selective contacts for III-V solar cells: A review

Non-epitaxial carrier selective contacts for III-V solar cells: A review

Topical review: pathways toward cost-effective single-junction III–V solar cells

Impact of GaAs(100) surface preparation on EQE of AZO/Al2O3/p-GaAs photovoltaic structures

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Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures