ZnO/GaN heterostructure for LED applications

Titkov, Ilya E.; Delimova, L. A.; Zubrilov, A. S.; Seredova, N. V.; Liniichuk, I. A.; Grekhov, I. V.

doi:10.1080/09500340902737051

Cited by 25 publications

(15 citation statements)

References 12 publications

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“…Blue-violet emission, believed to predominantly originate from recombination in p-GaN layer, with a weak contribution from ZnO defect emission under forward bias was previously reported for hydrothermally grown ZnO nanowires [3]. Yellow emission peak was previously attributed to defects in ZnO [13] and lattice defects in GaN [21,22,24]. Considering the fact that yellow emission under reverse bias was also observed in devices which exhibited green defect emission PL from ZnO [23], it is possible that yellow emission indeed originates either from GaN or the interface between GaN and ZnO.…”

Section: Resultsmentioning

confidence: 98%

Solution-based growth of ZnO nanorods for light-emitting devices: hydrothermal vs. electrodeposition

Chen

Fang

et al. 2010

Appl. Phys. B

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ZnO nanorods have been grown by two inexpensive, solution-based, low-temperature methods: hydrothermal growth and electrodeposition. Heterojunction n-ZnO nanorods/p-GaN light-emitting diodes have been studied for different nanorod growth methods and different preparation of the seed layer. We demonstrate that both the nanorod properties and the device performance are strongly dependent on the growth method and seed layer. All the devices exhibit light emission under both forward and reverse bias, and the emission spectra can be tuned by ZnO nanorod deposition conditions. Electrodeposition of rods or a seed layer results in yellow emission, while conventional hydrothermal growth results in violet emission.

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Section: Resultsmentioning

confidence: 98%

Solution-based growth of ZnO nanorods for light-emitting devices: hydrothermal vs. electrodeposition

Chen

Fang

et al. 2010

Appl. Phys. B

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“…1 GaN is a potential candidate for blue light emitting diodes (LED) making its application for full color displays. [2][3][4][5] Bulk GaN synthesized experimentally has a wide direct bandgap of 3.4 eV at room temperature making it suitable for the fabrication of blue LEDs and ultraviolet LEDs and high temperature power electronic devices. 6 The advancement in low dimensional materials has a great impact in the enhancement and performance of optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

First-Principles Investigation on Band Structure and Electronic Transport Property of Gallium Nitride Nanoribbon

Chandiramouli

Sriram

2014

NANO

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The electronic transport property and band structure of pure gallium nitride, oxygen,°uorine, indium substituted gallium nitride nanoribbon and defect structured GaN nanoribbons are investigated by employing¯rst-principles studies using density functional theory. The band structure of pure GaN and indium substituted GaN nanoribbon shows a semiconducting nature. The oxygen,°uorine substituted GaN and defect structured GaN results in metallic behavior. The density of states provides the insight for the localization of charges in the valence band and conduction band. The substitution of oxygen and°uorine enhance the density of charges in valence band and conduction band. The substitution of indium shows an increase in the peak amplitude in density of states. The presence of defect also increases the density of states. The transport properties are studied in terms of transmission spectrum; pure GaN and indium substituted shows a same trend in transmission. In contrast, the transmission can be enhanced by the substitution of oxygen,°uorine and defect in nanoribbon. The information provided in the present study will pave its way to tailor a new material of GaN nanostructures with improved performance in the optoelectronic devices.

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“…At the same time, the electron injection into p-GaN is expected to be more efficient than the injection of holes into ZnO, and consequently recombination would occur on the pGaN side of the junction. Indeed, yellow emission in ZnO/ GaN LEDs has been previously attributed to GaN lattice defects 11 and recombination involving deep acceptors. Concerning the difference in peak position between yellow and orange-red emission, this has been attributed to the transition involving deep acceptors (yellow) and transitions involving deep donors and deep acceptors (red).…”

Section: The Origin Of the Emission Peaksmentioning

confidence: 99%

“…For example, in addition to devices lighting up under forward bias, devices lighting up under reverse bias 4, [8][9][10]12,13,28 have been reported. Also, a variety of the emission peaks at different wavelengths have been observed, including UV, UV-violet, violet-blue, green, yellow, and orange-red, with multiple peaks frequently present 11,14,18,19,22 which in some cases results in white emission. 21,28 These emissions have been attributed to different mechanisms in the literature.…”

Section: Introductionmentioning

confidence: 99%

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

Chen

Fang

et al. 2011

Journal of Applied Physics

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Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence Appl. Phys. Lett. 100, 153506 (2012) Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring J. Appl. Phys. 111, 074512 (2012) Effects of energetic disorder on the low-frequency differential capacitance of organic light emitting diodes J. Appl. Phys. 111, 074506 (2012) Probing the electrode-polymer interface in conjugated polymer devices with surface-enhanced Raman scattering Appl. Phys. Lett. 100, 141907 (2012) Low-cost caesium phosphate as n-dopant for organic light-emitting diodes J. Appl. Phys. 111, 074502 (2012) Additional information on J. Appl. Phys. ZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m 2 and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l'éclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells.

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ZnO/GaN heterostructure for LED applications

Cited by 25 publications

References 12 publications

Solution-based growth of ZnO nanorods for light-emitting devices: hydrothermal vs. electrodeposition

Solution-based growth of ZnO nanorods for light-emitting devices: hydrothermal vs. electrodeposition

First-Principles Investigation on Band Structure and Electronic Transport Property of Gallium Nitride Nanoribbon

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

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