ZnO Interface Electrical Properties-Role of Oxygen Chemisorption

Growth and conductivity enhancement of N-doped ZnO nanorod arrays

“…The morphology has no significant effect on the resistivity. The electrical resistivity of the ZnO is directly related to the number of electrons, electrons formed by ionization of the interstitial zinc atom and oxygen vacancies [45]. In addition, the electrical resistivity was determined by both the mobility and carrier concentration.…”

Effect of aluminium doping on zinc oxide thin films grown by spray pyrolysis

“…Another II-VI wide gap semiconductor, zinc oxide (ZnO), with bandgap E g = 3.37 eV at room temperature, has also been paid much attention [6][7][8]. Since the exciton binding energy of ZnO is about 60 meV [9], roughly three times larger than that of GaN, and the biexciton formation energy of ZnO is about 15 meV [10], also much larger than that of GaN, ZnO is considered to be a promising material for novel exciton-related devices.…”

“…ZnO is an n-type semiconductor with a hexagonal wurtzite structure [11,12]. The ZnO conductivity is well-known to originate from the ionization of zinc interstitials and oxygen vacancies, which act as donor levels [10]. Between the above-mentioned two mechanisms, the formation of carriers by the ionization of zinc interstitials has been acknowledged to be predominant in intrinsic ZnO crystals.…”