ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition

Xu, Weizhong; Ye, Z. Z.; Zeng, Yu‐Jia; Zhu, Liping; Zhao, Binghui; Jiang, Li Jun; Lü, Jianguo; He, Haiping; Zhang, Shou-Cheng

doi:10.1063/1.2199588

Cited by 259 publications

(108 citation statements)

References 24 publications

Supporting

Mentioning

106

Contrasting

Unclassified

Order By: Relevance

“…Cost-effective transparent conductive oxide (TCO) films are increasingly demanded for a number of electronic devices such as solar cells, flat panel displays and light-emitting diodes 1 . So far, tin-doped indium oxide (ITO) is the most common TCO owing to its superior electrical conductivity and optical transmission.…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

et al. 2016

View full text Add to dashboard Cite

Zinc oxide (ZnO) films were prepared on amorphous quartz substrates by sol-gel spin-coating using Zn(CH 3 COO) 2 •2H 2 O precursor. Isopropanol, ethanol and 2-methoxyethanol were used as solvents. The film drying temperature was kept constant at 200 ºC and the annealing temperature was varied from 400 to 800 ºC. Highly transparent and (002)-oriented hexagonal wurtzite-type ZnO films were obtained using isopropanol solvent. The ZnO films prepared at T anneal = 600 ºC showed the highest (002) preferential orientation, however it was not the significant feature to achieve low resistivity. The uniform and (002)-oriented ZnO films prepared at T anneal = 400 ºC display the highest transmittance (>93% in the visible region) and the lowest resistivity (7.1 Ω•cm).

show abstract

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Among the available techniques, owing to the industrial compatibility, MOCVD has been widely used to grow ZnO [3,5,6]. Recently, large breakthrough has been obtained and RT electroluminescence (EL) from ZnO p-n homo-junction grown by MOCVD was observed [1,[5][6][7]. However, the observed EL was very weak due to the low p-type characteristics and high defects concentration such as hydrogen impurities that are found invariably in the ZnO films deposited by different techniques.…”

Section: Introductionmentioning

confidence: 99%

“…have been employed [1][2][3][4]. Among the available techniques, owing to the industrial compatibility, MOCVD has been widely used to grow ZnO [3,5,6]. Recently, large breakthrough has been obtained and RT electroluminescence (EL) from ZnO p-n homo-junction grown by MOCVD was observed [1,[5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Influencia del gas portador en las propiedades de películas de ZnO crecidas mediante MOCVD

Wang¹,

Elangovan²,

Sallet

et al. 2008

Bol. Soc. Esp. Ceram. Vidr.

View full text Add to dashboard Cite

ZnO films were grown on sapphire (001) substrate by atmospheric MOCVD using diethyl zinc and tertiary butanol precursors. The influence of different carrier gases (H 2 and He) on the properties was analyzed by their structural (XRD), microstructural (SEM) and compositional (SIMS) characterization. The intensity of the strongest diffraction peak from ZnO (002) plane was increased by about 2 orders of magnitude when He is used as carrier gas, indicating the significant enhancement in crystallinity. The surface of the samples grown using H 2 and He carrier gases was composed of leaf-like and spherical grains respectively. Hydrogen [H] content in the film grown using H 2 is higher than that using He, indicating that the [H] was influenced by the H 2 carrier gas. Ultraviolet emission dominates the low temperature PL spectra. The emission from ZnO films grown using He show higher optical quality and more emission centers. Keywords: ZnO thin films; MOCVD; SIMS profile; PL spectra. Influencia del gas portador en las propiedades de películas de ZnO crecidas mediante MOCVD.Se depositaron películas de ZnO sobre sustratos de zafiro (001) utilizando dietil zinc y butanol terciario como precursores. La influencia de los diferentes gases portadores (H 2 y He) sobre las propiedades se estudió mediante la caracterización estructural (XRD), microestructural (SEM) y composicional (SIMS). La intensidad del pico de difracción más importante del plano (002) del ZnO aumentó en dos órdenes de magnitud cuando se utiliza He como gas portador indicando un incremento significativo de la cristalinidad. La superficie de las muestras crecidas utilizando H 2 y He está formada por granos en forma de hoja y de forma esférica respectivamente. El contenido en hidrógeno (H) en la película es mayor cuando se utiliza H 2 que cuando se utiliza He, indicando que la cantidad de hidrógeno está influenciada por el H 2 del gas portador. La emisión ultravioleta domina el espectro PL de baja temperatura. La emisión de las películas de ZnO utilizando He muestra mayor calidad óptica y más centros de emisión. ZnO, MOCVD, perfil de SIMS, espectro PL. Palabras clave: estructura Capas delgadas de

show abstract

“…The turn-on voltage is ϳ2 V, which is consistent with the previous reports. 18,19 The left inset of Fig. 3 shows the I-V curves measured for a pair of contacts on the p-type and n-type ZnO layers.…”

mentioning

confidence: 99%

p -type Zn1−xMgxO films with Sb doping by radio-frequency magnetron sputtering

Wang

Chen

Yin

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

Sb-doped Zn 1−x Mg x O films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. The p-type conduction of the films ͑0.05ഛ x ഛ 0.13͒ was confirmed by Hall measurements, revealing a hole concentration of 10 15 -10 16 cm −3 and a mobility of 0.6-4.5 cm 2 /V s. A p-n homojunction comprising an undoped ZnO layer and an Sb-doped Zn 0.95 Mg 0.05 O layer shows a typical rectifying characteristic. Sb-doped p-type Zn 1−x Mg x O films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices.

show abstract

ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition

Cited by 259 publications

References 24 publications

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

Influencia del gas portador en las propiedades de películas de ZnO crecidas mediante MOCVD

p -type Zn1−xMgxO films with Sb doping by radio-frequency magnetron sputtering

Contact Info

Product

Resources

About