ZnO micro/nanorods: their performance in the photocatalytic degradation and photodiode

Yılmaz, Mehmet; Çırak, Çağrı; Canpolat, Nurtaç; Aydoğan, Ş.

doi:10.1007/s00339-023-06514-3

Cited by 4 publications

(4 citation statements)

References 83 publications

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“…At this point, we can focus on another reason for the diode we chose among the specimens. Since the selected diode has much less leakage current in the dark, both S and D * values are quite satisfactory. − Still, it is seen that it depends on the illumination intensities proportionally with R values (see Figure b) . Furthermore, the D * value of the diode was found to be 5.53 × 10 9 Jones under 120 mW cm –2 at zero bias voltage (self-powered mode), which is the situation where no voltage is applied to the structure and the charge carriers create photocurrent only with the diffusion effect.…”

Section: Results and Discussionmentioning

confidence: 89%

The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities

Ulusoy,

Koçyiğit,

Tataroğlu

et al. 2024

ACS Omega

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Five samples were fabricated to obtain a diode with a PVA interface, both with and without graphene doping at different rates with high rectification in the dark. The electrospinning method was employed to apply the doped and undoped solutions, creating the interlayers. Since the diode with a 1 wt % graphene-doped PVA interlayer outperformed the other samples, the main electrical and photodetector characteristics of this structure were investigated. The electrical parameters of the diode were probed by the TE, Norde, and Cheung methods, and the parameters (n and ϕ B ) acquired by both approaches were significantly influenced by illumination and voltages. The interface/surface state intensity values (N ss ) were also calculated in the dark and under each illumination as a function of the band/energy gap depth (E ss −E v ). The time-dependent steady-state conditions and rise-decay behavior of the photocurrents during illumination were also investigated. Due to the high photocurrent values, the photosensitivity at zero bias is approximately 1.4 × 10 4 at 100 mW cm −2 . The responsivity and detectivity values appear to be altered significantly with changes in the illumination and voltage. Additionally, a double logarithmic plot of I ph vs P reveals good linearity with slope values ranging from 0.5 to 1.

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Section: Results and Discussionmentioning

confidence: 89%

The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities

Ulusoy,

Koçyiğit,

Tataroğlu

et al. 2024

ACS Omega

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“…Two important parameters required for analyzing the performance of photodiodes are responsivity ( R ) and detectivity ( D *). R and D * are given by the following equations, respectively 64,65 :

\begin{equation}R\; = \frac{{{I_{{\mathrm{ph}}}} - {I_{{\mathrm{dark}}}}}}{{P.A}}\end{equation}

where I ph , P , and A are photocurrent, is the incident optical power, and effective area of the photodiode, respectively.

\begin{equation}{\mathrm{\;}}{D^*} = \frac{R}{{\sqrt {2q{J_{{\mathrm{dark}}}}} }}\end{equation}

where q and J dark are the elementary charges and the current density in the dark, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Two important parameters required for analyzing the performance of photodiodes are responsivity (R) and detectivity (D*). R and D* are given by the following equations, respectively 64,65 :…”

Section: Resultsmentioning

confidence: 99%

Surface plasmon resonance effects of Ag@ZnO core–shell nanostructure in UV and visible light for photodiode applications

Yilmaz,

Canpolat,

Aydoğan

2024

J Am Ceram Soc.

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Herein, Ag@ZnO core–shell nanostructures were prepared via the wet chemical method and were then dissolved in methanol and drop cast onto a p–Si wafer. Experimental current–voltage measurements of the Ag@ZnO/p–Si heterojunction device were investigated under both visible and UV illumination of 365 and 395 nm. The photocurrent, responsivity, detectivity, and on/off ratio were found to be dependent on the light intensity of visible light and wavelength of UV light. The low photocurrent at low light intensities and its rapid increase at high light intensities was attributed to the recombination of electrons and holes and also to the presence of traps at low light intensities. The responsivity and detectivity of the photodiode reach 1.32 A/W and 5.47 × 1011 Jones, respectively at 365 nm. On the contrary, the high performance under UV light was explained by the surface plasmon resonance between Ag and ZnO.

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“…Zinc oxide (ZnO) is also considered an important semiconductor material with promising potential, sharing similar characteristics to TiO 2 . In this regard, ZnO nanostructures are gaining attention in various fields, including solar cells, 3 gas sensors 4 , and photocatalysts 5 due to their high specific surface area and surface activity 6 . However, the high energy of the nanoparticle surface often causes aggregation, 7 which leads to a reduction of the specific surface area as well as the active sites.…”

Section: Introductionmentioning

confidence: 99%

Investigating the synergistic effect of ZnO/GO nanocomposite films for methylene blue removal

Yildirim,

Canpolat,

Aydogan

et al. 2024

J Am Ceram Soc.

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This study aims to reveal the growth kinetics of ZnO nanoflakes and ZnO/GO nanocomposite films obtained at different Zn precursor salt concentrations by electrochemical deposition method and to evaluate the catalytic performances of the obtained films. The films were grown on FTO substrate with Zn precursor salt concentrations of 0.1 M, 0.125 M, and 0.175 M. Characterization of the obtained films was performed by XRD, SEM, UV–vis–NIR, Raman, and XPS analyses. The strong photocatalytic capabilities of the synthesized ZnO nanoflakes and ZnO/GO nanocomposite films were demonstrated by comparative analyses with the existing literature. Accordingly, photocatalytic experiments carried out under UVA irradiation revealed the high performance of the synthesized samples in the degradation of MB dye. The reaction kinetics were investigated using the Langmuir‐Hinshelwood kinetic model, resulting in high kobs values and R2 coefficients. ZnO nanoparticles showed a kobs of 0.038 min−1 and an R2 value of 0.96, while ZnO/GO nanocomposite films showed a kobs of 0.055 min−1 and an R2 value of 0.92. The significant increase in the degradation percentage shows the significant improvement achieved by the integration of GO, despite a slightly lower R2 value for the ZnO/GO nanocomposite film compared with ZnO nanoflakes films.

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ZnO micro/nanorods: their performance in the photocatalytic degradation and photodiode

Cited by 4 publications

References 83 publications

The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities

The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities

Surface plasmon resonance effects of Ag@ZnO core–shell nanostructure in UV and visible light for photodiode applications

Investigating the synergistic effect of ZnO/GO nanocomposite films for methylene blue removal

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