ZnO-Nanowire-Induced Nanocavities in Photonic Crystal Disks

Sergent, Sylvain; Takiguchi, Masato; Tsuchizawa, Tai; Taniyama, Hideaki; Notomi, Masaya

doi:10.1021/acsphotonics.9b00286

Cited by 12 publications

(23 citation statements)

References 31 publications

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“…The slight deviation of the lasing wavelength (<5%) between the calculation and the experimental data was attributed to the fabrication imperfections. With 3D-FEM simulation, the modal volume of the lasing mode was calculated as 0.81 (λ/n) 3 (see supplementary information, section S4) which is compatible with reported lasers with similar cavity design 41,72 . It is worth to note that there are more than one high-Q modes in the PhC nanobeam cavity.…”

supporting

confidence: 72%

Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material

Lin

Hsu

Chang

et al. 2020

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The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. in this study, utilizing a high quality photonic crystal circular nanobeam cavity with a high quality factor and a sub-micrometer mode volume, we demonstrated an ultra-compact semiconductor laser with type-ii gallium antimonide/gallium arsenide quantum rings (GaSb/GaAs QRs) as the gain medium. the lasing mode localized around the defect region of the nanobeam had a small modal volume and significant coupling with the photons emitted by QRs. it leads the remarkable shortening of carrier lifetime observed from the time-resolved photoluminescence (tRpL) and a high purcell factor. furthermore, a high characteristic temperature of 114 K was observed from the device. The lasing performances indicated the type-II QRs laser is suitable for applications of photonic integrated circuit and bio-detection applications.Semiconductor nanostructures based on gallium antimonide (GaSb) and gallium arsenide (GaAs) have aroused considerable research interest because of their type-II band alignments and distinct material properties from those of the known InAs/GaAs based systems 1,2 . The staggered type-II band alignment leads to spatially indirect transitions of carriers and several unique optical properties such as the long carrier lifetime, wide coverage of emission wavelengths in the infrared (IR) regime, and stable emission less sensitive to the thermal effect. The optical characteristics and carrier dynamics of GaSb/GaAs quantum dots (QDs) systems have been investigated 3-8 and utilized in various applications including lasers 9-13 , optical memories 14-18 , bioimages 19 , and light emitting diodes 20,21 . However, the spatially indirect transition of carriers in type-II band structures also lowers the radiative recombination probability and hence limits the corresponding emission efficiency 22 . Recently, with the optimized source flux ratio during molecular beam epitaxy (MBE) 23-27 , the growth of GaSb/GaAs quantum rings (QRs) has been demonstrated, and these nanostructures exhibit the more intense photoluminescence (PL) than GaSb/GaAs QDs do 28,29 . The QRs have the less abrupt GaSb/GaAs interfaces but larger surface area than QDs do, which improve the wave function overlap between electrons and holes and therefore boost up the radiative recombination significantly 30 . The luminescence from coupled GaSb/GaAs QRs at room temperature can be even comparable to that of type-I InAs QDs 29 , indicating that GaSb QRs might play a role in the applications of laser diodes and light-emitting diodes 28,31 .Recently the novel low-dimensional gain materials such as QW 32,33 , QD 12,13,[34][35][36][37][38] , and two-dimensional materials 39,40 were integrated with compact optical cavities for lasing devices under continuous-wave 32,35,36,40 and electrical injection pumping 34,37,38 conditions. In this study, we demonstrated a photonic crystal (PhC) circular nanobeam defect cavity 41 laser...

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confidence: 72%

Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material

Lin

Hsu

Chang

et al. 2020

Sci Rep

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“…After the nanowires are grown, they are transferred via an inkjet printer onto a Si PhC substrate. For coarse manipulations into arbitrary locations, a customized indium needle is used, while AFM manipulation ,, is used for precise positioning. To prevent current bypass via leakage through the Si, an important preliminary step before the NWs are placed is to deposit a thin layer (10 nm) of Al 2 O 3 by atomic layer deposition (ALD) onto the surface of Si PhC.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, the combination of a nanowire and PhC is ideal. Previous demonstration of hybridized configurations include cavity QED experiments, integrated emitters , nanolasers , and all-optical switches as well as numerous reports on current-injected single nanowires photodetectors − However, there is yet to be a publication on the implicating effects a PhC has on current-injected nanowires.…”

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confidence: 99%

Hybrid Nanowire Photodetector Integrated in a Silicon Photonic Crystal

et al. 2020

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The combination of hybrid nanowire photodetector on silicon photonic crystals has the potential to be both highly sensitive and ultrafast. A p-i-n nanowire was integrated into a silicon photonic crystal via nanomanipulation technique and has been successfully implemented as a photodiode on silicon chip with Al:ZnO transparent electrode. The hybrid nanowire photodiode can detect laser light through the Al:ZnO coated input waveguide and is capable of measuring the photonic crystal enhanced photocurrent. In addition, a measurement of the enhanced photocurrent in the light cone by the nanoantenna was also conducted. Our results reveal the prospects for future photonic on-chip processors utilizing CMOS-compatible hybrid nanowire photodetector in a photonic crystal.

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“…This value is in line with the coupling factor range β ~ 2 × 10 −3 to 1.5 × 10 −2 found in Fabry-Pérot NW lasers based on various material systems. 42,44 It translates the multimode nature of the Fabry-Pérot cavity as well as a rather large mode volume if compared to plasmonic [10][11][12] and photonic crystal [38][39][40][41] nanocavities.…”

Section: Structural Propertiesmentioning

confidence: 99%

Subliming GaN into Ordered Nanowire Arrays for Ultraviolet and Visible Nanophotonics

et al. 2019

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We report on the fabrication of ordered arrays of InGaN/GaN nanowire quantum disks by a top-down selective-area sublimation method. Using a combination of two-dimensional molecular beam epitaxy of InGaN/GaN quantum wells, electron-beam lithography and ultrahigh-vacuum sublimation techniques, we demonstrate that the position, geometry and dimensions of nanowires can be finely controlled at nano-, micro-and macro-scales. Relying on structural data, we evaluate in particular the relative sublimation rates of GaN crystal planes that

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ZnO-Nanowire-Induced Nanocavities in Photonic Crystal Disks

Cited by 12 publications

References 31 publications

Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material

Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material

Hybrid Nanowire Photodetector Integrated in a Silicon Photonic Crystal

Subliming GaN into Ordered Nanowire Arrays for Ultraviolet and Visible Nanophotonics

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