ZnO Thin Films Growth Optimization for Piezoelectric Application

Polewczyk, Vincent; Maffei, Riccardo Magrin; Vinai, Giovanni; Cicero, Matteo Lo; Prato, Stefano Del; Capaldo, Pietro; Zilio, Simone Dal; Bona, A. di; Paolicelli, G; Mescola, Andrea; D’Addato, Sergio; Torelli, Piero; Benedetti, Stefania

doi:10.3390/s21186114

Cited by 12 publications

(4 citation statements)

References 61 publications

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“…Equation 4, based on the XRD peak shifts, [35][36][37] provides the expected peak shift for a given film stress deduced from Figure 4b. where ∆2𝜃 corresponds to the XRD peak shift from the stressfree position 𝜃 0 (34.42° [ 38] ), E f represents the ZnO Young´s Modulus (124 GPa [36] ), v f is the Poisson´s ratio (0.3 [36] ), and 𝜎 f is the stress in the film.…”

Section: Simulation Of D 33 Coefficient Under Mechanical Stressmentioning

confidence: 99%

A Refined Quasi‐Static Method for Precise Determination of Piezoelectric Coefficient of Nanostructured Standard and Inclined Thin Films

Garcia,

Gibson,

Hughes

et al. 2023

Advanced Physics Research

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Piezoelectric materials are key components for applications including non‐destructive testing, medical imaging, energy harvesting, ultrasonic sensors, and actuators. Among different materials exhibiting piezoelectricity, crystalline thin films are proposed as alternative candidates to replace ceramics due to their high integrability in micro‐/nano‐scale devices and compatibility with non‐conventional flexible/wearable substrates. To measure the piezoelectric response, Berlincourt (BC) quasi‐static method is proposed as one of the simplest, however for thin films this method has not yet been explored in sufficient detail. This paper reports the effects of measuring BC parameters on the resulting piezoelectric coefficient (d33) of sputter deposited ZnO with the shape of standard and inclined nanostructured thin films. Results provide comprehensive, reliable and repeatable information about true piezoelectric coefficient of thin films (6.0 ± 0.1 pC N−1 for standard; 24 ± 1 pC N−1 for inclined films) by selecting optimized parameters in BC measurements, including dynamic force (0.45 Npp), static force (1 N) and frequency (110 Hz), utilizing the protocol here named Method 2 for clamping the film, and measuring after the stage of high variability has passed (t >1200 s). Additionally, this modified BC has allowed the indirect estimation of stress accumulated in the ZnO lattice during measurements, offering a reliable and repeatable method for the determination of true d33 in crystalline thin films.

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Section: Simulation Of D 33 Coefficient Under Mechanical Stressmentioning

confidence: 99%

A Refined Quasi‐Static Method for Precise Determination of Piezoelectric Coefficient of Nanostructured Standard and Inclined Thin Films

Garcia,

Gibson,

Hughes

et al. 2023

Advanced Physics Research

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“…In recent years, A.P.E. Research has focused its efforts mainly on the development and optimization of new tools for KPFM and PFM [169][170][171][172]. The company's research group has twelve staff members, scientists (senior and young with PhD or degrees in physics, engineering, and biology), and technicians who are involved in R&D activities as well as in production, to share knowledge.…”

Section: Ape Researchmentioning

confidence: 99%

Probing Italy: A Scanning Probe Microscopy Storyline

Dinelli

Brucale

Valle

et al. 2023

Micro

Self Cite

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Starting from the late 1980’s, scanning probe microscopy has progressively diffused in Italy until today. In this paper, we provide a brief account of the main historical events and a current picture of the distribution of the active groups. A survey was prepared by LimeSurvey, made of six sections asking for personal and institutional data, human resources, equipment available, fields of interest, research projects, educational/dissemination activities, and two relevant publications in the last six years. It turns out that the Italian community includes more than seventy groups and two companies. It is widely diffused, although mostly concentrated near large academic and research institutions, often in locations where prominent Italian researchers have operated. This community is active in many scientific fields and can produce research of high international quality. It shows a wide competence, as proven by the list of research works published in journals ranked within the top 20% class. The diffusion of SPM microscopes in industry is still sporadic, possibly due to extensive collaborations between the research institutions and industries themselves. The authors hope that this work might be useful to the community and beyond, and that it might stimulate the formation of a more structured network.

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“…[2]. In particular, ZnO thin films are used for the development of optoelectronic [3], transparent conductive oxides (TCOs) [4] and piezoelectric devices [5], photovoltaics [6], photocatalysts [7], gas sensors [8][9][10] or biosensors [11][12][13] due to their impressive optical (photoluminescence-PL) [14][15][16], electrical (thermoelectric, piezoelectric) [17][18][19][20] and biological (antimicrobial and antibacterial) [21][22][23] properties. It is well known that by doping, the aforementioned properties of ZnO thin films can be significantly improved.…”

Section: Introductionmentioning

confidence: 99%

Effect of Al Incorporation on the Structural and Optical Properties of Sol–Gel AZO Thin Films

et al. 2023

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ZnO and Al-doped ZnO (AZO) thin films were prepared using the sol–gel method and deposited on a Silicon (Si(100)) substrate using the dipping technique. The structure, morphology, thickness, optical constants in the spectral range 300–1700 nm, bandgap (Eg) and photoluminescence (PL) properties of the films were analyzed using X-ray diffractometry (XRD), X-ray fluorescence (XRF), atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), Raman analysis and PL spectroscopy. The results of the structure and morphology analyses showed that the thin films are polycrystalline with a hexagonal wurtzite structure, as well as continuous and homogeneous. The PL background and broader peaks observable in the Raman spectra of the AZO film and the slight increase in the optical band gap of the AZO thin film, compared to undoped ZnO, highlight the effect of defects introduced into the ZnO lattice and an increase in the charge carrier density in the AZO film. The PL emission spectra of the AZO thin film showed a strong UV line corresponding to near-band-edge ZnO emission along with weak green and red emission bands due to deep-level defects, attributed to the oxygen-occupied zinc vacancies (OZn lattice defects).

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ZnO Thin Films Growth Optimization for Piezoelectric Application

Cited by 12 publications

References 61 publications

A Refined Quasi‐Static Method for Precise Determination of Piezoelectric Coefficient of Nanostructured Standard and Inclined Thin Films

A Refined Quasi‐Static Method for Precise Determination of Piezoelectric Coefficient of Nanostructured Standard and Inclined Thin Films

Probing Italy: A Scanning Probe Microscopy Storyline

Effect of Al Incorporation on the Structural and Optical Properties of Sol–Gel AZO Thin Films

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