ZnO transparent thin-film transistors with HfO
 2
 /Ta
 2
 O
 5
 stacking gate dielectrics

Chen, H.J.H.; Yeh, Barry B. L.; Pan, Hongliang; Chen, J.-S.

doi:10.1049/el:20083215

Cited by 8 publications

(4 citation statements)

References 5 publications

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“…2a–c). Reported results on TSO MISFETs 6, 5, 20–22, 32–100 are compiled in Table 1. On/off current ratio and mobility for these devices are visualized in Fig.…”

Section: Tso Transistorsmentioning

confidence: 99%

Transparent semiconducting oxides: materials and devices

Grundmann¹,

Frenzel²,

Lajn³

et al. 2010

Physica Status Solidi (a)

136

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Transparent conductive oxides (TCOs) are a well-known material class allowing Ohmic conduction. A large free carrier concentration in the 10 21 cm À3 range and high conductivity (beyond 10 4 S/cm) is feasible simultaneously with high transparency. Applications are manifold and include touch screens and front contacts for displays or solar cells. Transparent semiconducting oxides (TSO) are oxides with an intermediate free carrier concentration (typically 10 14 -10 18 cm À3 ) allowing the formation of depletion layers. We review recent results on TSO-based transistors and inverters. Most work has been reported on MISFETs. We show that MESFETs exhibit high performance and low voltage operation of oxide electronics. MESFET-based inverters offer superior performance compared to results reported for TSO MISFET-based circuits.Optical image of inverter based on thin film MESFETs with Mg 0.003 Zn 0.997 O channels (left) and experimental inverter characteristic for supply voltage of V DD ¼ þ2:0 V (right).

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“…2a–c). Reported results on TSO MISFETs 6, 5, 20–22, 32–100 are compiled in Table 1. On/off current ratio and mobility for these devices are visualized in Fig.…”

Section: Tso Transistorsmentioning

confidence: 99%

Transparent semiconducting oxides: materials and devices

Grundmann¹,

Frenzel²,

Lajn³

et al. 2010

Physica Status Solidi (a)

136

View full text Add to dashboard Cite

show abstract

“…For display applications, ZnO-based TFTs are highly attractive owing to their transparency and higher field effect mobility compared with conventional amorphous silicon TFTs. [1][2][3][4][5][6][7][8] A low-temperature (<450 C) process is another basic requirement for fabrication of ZnO-based TFTs for future flexible or invisible display applications. ZnO-based TFTs have been fabricated using various low-temperature deposition techniques, such as RF-sputtering, 3) atomic layer deposition, 4) pulsed laser deposition, 7) and chemical solution deposition.…”

Section: Introductionmentioning

confidence: 99%

“…8) To improve their electrical properties, ZnObased TFTs may be fabricated with substrate heating (100 -300 C) [5][6][7] or following a post-thermal annealing process (100 -350 C). 2,7,8) Besides, to reduce operating voltage and for possible process integration, a high-k gate dielectric has become the major candidate of ZnO TFTs. [2][3][4][5][6][7][8][9][10] Deleterious chemical interactions at the dielectric/semiconductor interface were predicted to be suppressed because of the fact that the ZnO thin film and the high-k gate dielectric are both oxide-based materials.…”

Section: Introductionmentioning

confidence: 99%

“…2,7,8) Besides, to reduce operating voltage and for possible process integration, a high-k gate dielectric has become the major candidate of ZnO TFTs. [2][3][4][5][6][7][8][9][10] Deleterious chemical interactions at the dielectric/semiconductor interface were predicted to be suppressed because of the fact that the ZnO thin film and the high-k gate dielectric are both oxide-based materials. However, for the bottom gate ZnObased TFTs, the ZnO layer is usually fabricated on a highk gate dielectric.…”

Section: Introductionmentioning

confidence: 99%

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Optimization of the Fabrication Process for ZnO Thin-Film Transistors with HfO₂ Gate Dielectrics

Chen

Yeh

2009

jjap

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We report measurements of the thermal conductivity, specific heat, and critical temperature of the aluminium alloy 5056 in the range 0.05 to 1.3 K. The absence of magnetic anomalies in the specific heat and the rather high thermal conductivity in the superconducting state would allow reasonably fast cool-down below 0.1 K of multiton gravitational wave antennae made of this material. On the basis of the measured properties. the desired refrigerator characteristics are discussed.

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Gate Dielectrics in Oxide Electronics

Barquinha

Martins

Pereira

et al. 2012

Transparent Oxide Electronics

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ZnO transparent thin-film transistors with HfO ₂ /Ta ₂ O ₅ stacking gate dielectrics

Cited by 8 publications

References 5 publications

Transparent semiconducting oxides: materials and devices

Transparent semiconducting oxides: materials and devices

Optimization of the Fabrication Process for ZnO Thin-Film Transistors with HfO₂ Gate Dielectrics

Gate Dielectrics in Oxide Electronics

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ZnO transparent thin-film transistors with HfO 2 /Ta 2 O 5 stacking gate dielectrics

Cited by 8 publications

References 5 publications

Transparent semiconducting oxides: materials and devices

Transparent semiconducting oxides: materials and devices

Optimization of the Fabrication Process for ZnO Thin-Film Transistors with HfO2 Gate Dielectrics

Gate Dielectrics in Oxide Electronics

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Product

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About

ZnO transparent thin-film transistors with HfO ₂ /Ta ₂ O ₅ stacking gate dielectrics

Optimization of the Fabrication Process for ZnO Thin-Film Transistors with HfO₂ Gate Dielectrics