ZnS:Mn Thin Film Electroluminescent Devices Having Doubly-Stacked Insulating Layers

Mita, Juro; Koizumi, Masumi; Kanno, Hiromasa; Hayashi, Tadashi; Sekido, Yoshihiro; Abiko, I.; Nihei, K.

doi:10.1143/jjap.26.l541

Cited by 18 publications

(6 citation statements)

References 5 publications

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“…Doped zinc sulphide (ZnS) has been the subject of a large number of investigations because of its practical application as a luminophor (Czajka and Gordon 1983;Renz and Schulz 1983;Warren et al 1983;Choudhary et a1"1984; Maheshwari and Pathak 1984;Chaubey and Tripathi 1985;Brada 1989). Attempts were therefore made to increase its efficiency and improve the breakdown voltage margin (Okamoto et al 1979;Ogura et al 1986;Okamoto and Hamakawa i986;Mita et al 1987;Milind et al 1990). It has been reported that even a small amount of impurities such as Fe, Co and Ni present in the phosphor can greatly hamper the luminescence efficiency or can completely destroy it.…”

Section: Introductionmentioning

confidence: 99%

Electrical conductivity of doped ZnS

Sharma

Singh

1991

Bull. Mater. Sci.

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The electrical conductivity of doped ZnS with different impurities (Mn, Fe, Co, Ni and Cu) of various concentrations has been measured to verify the existence of ladderlike levels of 'killers' of luminescence. Attempts have been made to ascertain the separation between-the valence band of the host ZnS and the ground state of the accepter impurities and also to investigate the effect of various concentrations of impurities on the electrical conductivity of doped ZnS.

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Section: Introductionmentioning

confidence: 99%

Electrical conductivity of doped ZnS

Sharma

Singh

1991

Bull. Mater. Sci.

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“…22) The prepared Ta 2 O 5 layer had many O vacancies contributing electron conduction, so it could also be expected to act as an electron injection layer. 23) Al thin film was formed on the Ta 2 O 5 layer by thermal evaporation as a cathode. A conventional DC-EL device without an a-Si:H layer was also prepared for comparison.…”

Section: Experimental Methodsmentioning

confidence: 99%

Effects of amorphous Si on DC electroluminescent devices

Yanagihara¹,

Unji²,

Nishiguchi³

et al. 2019

Jpn. J. Appl. Phys.

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In order to reduce the driving voltage of DC electroluminescent (EL) devices, an electron injection structure with a hydrogenated amorphous Si (a-Si:H) interlayer between a Ta2O5 layer and ZnS:Mn layer was investigated. It was shown that junction capacitance existed between the Ta2O5 layer and ZnS:Mn layer and that the junction capacitance decreased due to the insertion of the a-Si:H layer. These results were confirmed by impedance spectra. The threshold voltage decreased with the insertion of the a-Si:H layer, and luminance gradually increased over the threshold voltage compared with that in conventional DC-EL devices, because the interlayer formed a stepwise band structure in the device. Moreover, the carrier multiplication effect of a-Si was confirmed under photoexcitation. Although a clear multiplication effect was not obtained, the possibility of further efficiency improvement by the multiplication effect was shown.

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“…[1][2][3] Furthermore, these films have also been used for insulating films for electroluminescent ͑EL͒ display devices. 4,5 In the EL devices, the insulating films are required to be prepared on transparent electrodes such as indium tin oxide ͑ITO͒ electrodes. Therefore, the electrical properties of the Ta 2 O 5 films on the ITO electrodes play an important role in improving the performances of the EL devices.…”

Section: Electrical Properties Of Ta-sn-o Films On Indium Tin Oxide Ementioning

confidence: 99%

Electrical properties of Ta–Sn–O films on indium tin oxide electrodes

Fujikawa

Noda

Tokito

et al. 1997

Applied Physics Letters

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We have found that Ta–Sn–O films prepared on indium tin oxide (ITO) electrodes by magnetron cosputtering of Ta2O5 and SnO2 have much higher breakdown field strength than the Ta2O5 films on the ITO electrodes. The highly insulating Ta–Sn–O films were obtained in the Sn concentration range of 3–40 at. %. The figure of merit, which was defined by the multiplication of the breakdown field strength by the relative dielectric constant, of the Ta–Sn–O films was found to become a maximum in the Sn concentration of about 3 at. %. The experimental results of temperature dependence of the leakage currents indicated that the conduction mechanisms at room temperature changed from Poole–Frenkel type to Fowler–Nordheim tunneling type by adding SnO2 into Ta2O5 films.

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ZnS:Mn Thin Film Electroluminescent Devices Having Doubly-Stacked Insulating Layers

Cited by 18 publications

References 5 publications

Electrical conductivity of doped ZnS

Electrical conductivity of doped ZnS

Effects of amorphous Si on DC electroluminescent devices

Electrical properties of Ta–Sn–O films on indium tin oxide electrodes

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