ZnSe:N Epilayers Grown by Low-Pressure Metalorganic Chemical Vapor Deposition Using a Radio Frequency Plasma Source

Sim, Eundeok; Joh, Y.S.; Song, Jee-Hun; Park, H.L.; Lee, S.H.; Jeong, Kyunga; Chang, Suk‐Kyu

doi:10.1002/1521-3951(200201)229:1<213::aid-pssb213>3.0.co;2-b

Cited by 5 publications

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Electrical and optical properties of ZnSe:N epilayers

Joh

Kim

Song³

et al. 2004

phys. stat. sol. (c)

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Using nitrogen radio-frequency (RF) plasma operated in low-pressure metal-organic chemical vapor deposition (LP-MOCVD), ZnSe:N epilayers were grown. Their optical and electrical properties were investigated with photoluminescence (PL) and deep level transient spectroscopy (DLTS). PL spectra of ZnSe : N epilayers show that acceptor-bound exciton (I 1 ) at 2.792 eV, donor-acceptor pair (DAP) at 2.65 ~ 2.70 eV and its phonon replica in the lower energy side were dominant at low temperature. As increasing temperature, the intensity of the DAP line decreases rapidly compared to that of the exciton line. In addition, the free (electron)-to-acceptor (FA) emission appears on the high energy side of the DAP emission due to the partial ionization of shallow donors above 30 K. From the temperature dependence of the PL peak intensities, it can be seen that the activation energy of exciton line (22.3 meV) is in good agreement with the binding energy of the free exciton (21 meV). We investigate electrical properties of nitrogen-doped ZnSe films by measuring capacitance-voltage characteristic curve and DLTS. We have carried out DLTS to study deep hole traps in ZnSe:N epilayer and hole traps with the activation energy of 470 ~ 790 meV were detected.

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