ZnSe-Si Bi-coaxial Nanowire Heterostructures

Wang, Chunrui; Wang, Juan; Li, Quan; Yi, Gyu‐Chul

doi:10.1002/adfm.200400564

Cited by 70 publications

(54 citation statements)

References 53 publications

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“…For ZnSe nanostructures, nanowires [1,2], nanobelts [3], nanorings [4], and nanotetrapods [5] have been reported. Meanwhile, the sophisticated nanostructures of ZnSe combined with other materials have also been demonstrated, such as ZnO-ZnSe [6,7], CdSe-ZnSe [8], and Si-ZnSe [9,10]. The transition energy and thus the emission spectrum of the nanostructures can be modified statically and dynamically.…”

Section: Introductionmentioning

confidence: 99%

Largely extended light-emission shift of ZnSe nanostructures with temperature

Choy¹,

Leung²

2011

Appl. Opt.

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ZnSe nanowires and nanobelts with zinc blende structure have been synthesized. The morphology and the growth mechanisms of the ZnSe nanostructures will be discussed. From the photoluminescence (PL) of the ZnSe nanostructures, it is interesting to note that red color emission with only a single peak at the photon energy of 2 eV at room temperature is obtained while the typical bandgap transition energy of ZnSe is 2:7 eV. When the temperature is reduced to 150 K, the peak wavelength shifts to 2:3 eV with yellowish emission and then blue emission with the peak at 2:7 eV at temperature less than 50 K. The overall wavelength shift of 700 meV is obtained as compared to the conventional ZnSe of about 100 meV (i.e., sevenfold extension). The ZnSe nanostructures with enhanced wavelength shift can potentially function as visible light temperature-indicator. The color change from red to yellowish and then to blue is large enough for the nanostructures to be used for temperature-sensing applications. The details of PL spectra of ZnSe at various temperatures are studied from (i) the spectral profile, (ii) the half-width half-maximum, and (iii) the peak photon energy of each of the emission centers. The results show that the simplified configuration coordinate model can be used to describe the emission spectra, and the frequency of the local vibrational mode of the emission centers is determined.

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Section: Introductionmentioning

confidence: 99%

Largely extended light-emission shift of ZnSe nanostructures with temperature

Choy¹,

Leung²

2011

Appl. Opt.

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“…Another is one-step route for growth of II-VI/IV nanowires, such as our experimental observation. Our experimental results have indicated that the growth of these ZnSe/Ge bi-axial nanowire heterostructures can be explained by using a co-growth vapor-transfer mechanism (one-step route) [14]. ZnSe and Ge in the vapor phase are transferred to the lower temperature zone.…”

Section: The Possible Mechanismmentioning

confidence: 97%

“…The presently reported 1D ZnSe-related heterostructural nanowires are mostly composed of sublayer sections between different crystal structures such as ZnSe/Si [14], ZnSe/GaP [15]. In addition, when considering the group IV semiconductors, a diamond-cubic structure, it is well known that Ge has an excitonic radius (24.3 nm) much larger than that of silicon (4.9 nm), and thus more prominent quantum-size effects [16].…”

Section: Introductionmentioning

confidence: 98%

Synthesis and vibrating properties ZnSe/Ge bi-axial heterostructural nanowires

Wang

Liu

et al. 2011

Chemical Physics Letters

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“…As one of the important Zn-based II-VI semiconductors, zinc selenide (ZnSe) has been considered as a perspective material for optoelectronic devices, including blue laser diodes, light emitting diodes and photo detectors due to its wide direct band gap (2.67 eV) and large exciton binding energy (21 meV), etc. [2][3][4]. Moreover, ZnSe is also a promising material for windows, lenses, output couplers, beam expanders, and optically controlled switching due to its low absorptivity at infrared wavelength, its visible transmission and giant photosensitivity [5].…”

Section: Introductionmentioning

confidence: 99%