ZnSe sintered films: Growth and characterization

Effect of annealing on structural and optoelectronic properties of nanostructured ZnSe thin films

“…The increase in energy band gap from 2.60 to 2.67 eV may be related with the existence of high-density levels within the band gap [25] and the structural changes causing quantum confinement effects in the ZnSe films with annealing temperature [21][22][23]. The calculated values of band gap are in good agreement with that of the films deposited by vacuum evaporation (2.63-2.64 eV) [9], screen-printing (2.66 eV) [26] and two-source evaporation (2.68 eV) [27] methods. But the band gap values reported in this study are higher than that of the films deposited by closed spaced sublimation (2.57-2.61 eV) technique [14].…”

Optimization of sintering temperature in CdZnS films using reflection spectroscopy

“…3. The energy band gap of this film is determined by plotting a graph between (ahv) 2 or [hm ln(R max À R min )/ (R À R min )] 2 vs (hm), 8,[11][12][13][14][15] as shown in Fig. 4, where hm is the photon energy, the reflection falls from R max to R min due to absorption by the material, and R is the reflectance for any intermediate energy photons.…”

Synthesis and characterization of screen printed ZnO films for solar cell applications

“…All rights reserved. muffle furnace in an open atmosphere at 550 • C for 10 min so as to stabilize the film and burn the organic materials [14]. The thickness of the film was calculated by using Taylor-Hobson instrument and it was found of the order of 1 m. A description of screen printing process is depicted in Fig.…”