ZnSeTe Rediscovered: From Isoelectronic Centers to Quantum Dots

Gu, Yi; Kuskovsky, Igor L.; Neumark, G. F.

doi:10.1002/9783527617074.ch4

Cited by 3 publications

(3 citation statements)

References 57 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…If some intermixing occurs, the presence of Zn in these structures will blueshift the energies of the transitions if their size remains the same, therefore in order to fit the transition energies an increase in the structure dimensions is necessary. Raman studies on these samples 28 show that the WL and QDs longitudinal optical phonon energies correspond to compositions with less than 10% of Zn, supporting the hypothesis of small degree of intermixing made in our modeling.…”

supporting

confidence: 84%

Contactless electroreflectance of CdSe/ZnSe quantum dots grown by molecular-beam epitaxy

Muñoz

Guo

Zhou

et al. 2003

Applied Physics Letters

View full text Add to dashboard Cite

The interband transitions of a capped CdSe quantum-dot structure have been investigated using contactless electroreflectance. The electroreflectance spectrum shows transitions originating from all the portions of the sample including the quantum dots and the wetting layer. The transitions of the two-dimensional layers have been modeled using an envelope approximation calculation which takes into account the biaxial strain in the wetting layer. A good agreement was found between the experimental values for the transition energies and the calculated ones. From atomic force microscopy measurements, a lens shape was observed for the uncapped quantum dots. Taking into account the lens shape geometry and assuming that the effective height-to-radius ratio is preserved, the size of the capped quantum dots was determined using the observed electroreflectance transitions, in the framework of the effective mass approximation.

show abstract

supporting

confidence: 84%

Contactless electroreflectance of CdSe/ZnSe quantum dots grown by molecular-beam epitaxy

Muñoz

Guo

Zhou

et al. 2003

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Photonic technologies benefit from the availability of broad spectral ranges at which light propagation is inhibited, especially in the visible spectral range, for instance to increase light extraction efficiency in ultra-low-threshold semiconductor lasers [1,2], light-emitting diodes [3], or perovskites thin films [4]. The existence and engineering of suitable light stopbands is at the foundation of photonic crystals (PhCs) [5,6], in which the geometry and symmetries of the dielectric arrangement determine most of the overall properties of the system.…”

Section: Introductionmentioning

confidence: 99%

Blue-Noise-Based Disordered Photonic Structures Show Isotropic and Ultrawide Band Gaps

De Tommasi,

Romano,

Zito

2023

Optics

View full text Add to dashboard Cite

Spatially disordered but uniformly distributed point patterns characterized by so-called blue-noise long-range spatial correlations are of great benefit in computer graphics, especially in spatial dithering thanks to the spatial isotropy. Herein, the potential photonic properties of blue-noise disordered, homogeneous point processes based on farthest-point optimization are numerically investigated for silicon photonics. The photonic properties of blue-noise two-dimensional patterns are studied as a function of the filling fraction and benchmarked with photonic crystals with a triangular lattice. Ultrawide and omnidirectional photonic band gaps spanning most of the visible spectrum are found with estimates of gap–midgap ratios of up to 55.4% for transverse magnetic polarization, 59.4% for transverse electric polarization, and 32.7% for complete band gaps. The waveguiding effect in azimuthal defect lines is also numerically evaluated. These results corroborate the idea that long-range correlated disordered structures are helpful for engineering novel devices with the additional degree of freedom of spatial isotropy, and capable of bandgap opening even without total suppression of infinite-wavelength density fluctuations.

show abstract

“…Su respuesta óptica se debe fundamentalmente al tamaño de su brecha de energía prohibida o gap del semiconductor la cual se encuentra ubicada en 2,87 eV [6], [7], valor que se encuentra en el azul del espectro visible.…”

Section: Introductionunclassified

Estudio de la respuesta espectral en el visible de películas delgadas de ZnSe

et al. 2014

View full text Add to dashboard Cite

En este trabajo es presentado el estudio de la fotoconductividad en películas delgadas de ZnSe depositadas sobre sustratos de vidrio a diferentes temperaturas, en condiciones de alto vacío usando la técnica de evaporación térmica. El efecto de la temperatura de sustrato sobre la fotoconductividad espectral y las propiedades morfológicas de las películas delgadas de ZnSe fueron estudiados. Para las medidas de fotoconductividad se depositaron contactos de cobre sobre las muestras. Se midieron las respuestas espectrales para las muestras para el rango comprendido entre 290 y 500 nm. En todas las muestras la señal presento dos contribuciones asociadas a las transiciones E(Γ7V – Γ6C) y Eg(Γ8V – Γ6C) con valores promedio de energía de 3.35 y 2.80 eV, respectivamente. El tiempo de respuesta de las muestras está asociado a la morfología de la muestras. En las muestras preparadas a bajas temperaturas se obtuvieron tiempos de respuesta del orden de los segundos, mientras que, el tiempo disminuye en un orden de magnitud en las muestras preparadas a temperatura de sustrato de 250 °C.

show abstract

ZnSeTe Rediscovered: From Isoelectronic Centers to Quantum Dots

Cited by 3 publications

References 57 publications

Contactless electroreflectance of CdSe/ZnSe quantum dots grown by molecular-beam epitaxy

Contactless electroreflectance of CdSe/ZnSe quantum dots grown by molecular-beam epitaxy

Blue-Noise-Based Disordered Photonic Structures Show Isotropic and Ultrawide Band Gaps

Estudio de la respuesta espectral en el visible de películas delgadas de ZnSe

Contact Info

Product

Resources

About