ZrO₂ on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition

Abstract

Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of nearinterface hydrogen Electrical characteristics of ZrO2/GaAs MOS capacitor fabricated by atomic layer deposition J. Vac. Sci. Technol. A 31, 041505 (2013); 10.1116/1.4807732 Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectric Appl. Phys. Lett. 93, 053504 (2008);

Band alignments of sputtered dielectrics on GaN

“…The I-V and current density-voltage (J-V) characteristics of MIS-capacitors fabricated using the three different di electrics are shown in figure 7. The leakage current density of MIScapacitor with 20 nm ZrO 2 gate dielectric is 6.2 × 10 −4 A cm −2 at 1 V, which, taking into account the difference in oxide thickness, is lower than the previously reported value of 0.88 A cm −2 at 1 V for 4.4 nm ALD-deposited ZrO 2 /GaN MIS-capacitor [62]. Similarly, the 20 nm Al 2 O 3 -based MIScapacitor shows a lower leakage current density than that of ZrO 2 at 5.3 × 10 −6 A cm −2 at 1 V gate bias.…”

“…Note that the referenced papers lack analysis of the leakage current data. A weak temperature dependence was noted for the oxide leakage in ALD deposited ZrO 2 on GaN [62] indicating the dominance of a tunnelling mechanism but a barrier height (conduction band offset) was not extracted. The band offset values (VBO = 1 eV and CBO = 2.2 eV) obtained by Jia et al [17] are comparable with this work (VBO = 1.1 eV and CBO = 2.2 eV) but the differing test conditions make it difficult to compare leakage currents directly.…”

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

“…The capacitance reached 3.8 μF/cm 2 in the accumulation region. However, the leakage current reached an enormous 0.88 A/cm 2 at 1 V which was too large to be applied in electronic devices [ 15 ]. In 2014, Gand Ye et al investigated the band alignment of ZrO 2 and GaN using X-ray photoelectron spectroscopy [ 16 ].…”

Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-κ gate dielectrics

“…The detailed description of the deposition procedure can be found in previous publications. 8,9,32 Substrate temperature was maintained at 100 C and chamber pressure was kept at 1.07 Torr during thin lm growth. Tetrakis(dimethylamido)-zirconium (Sigma-Aldrich >99.99%) and tetrakis(dimethylamido)hafnium (Sigma-Aldrich >99.99%) were utilized as precursor for zirconium and hafnium, respectively.…”

“…The schematic of the MOSCAP devices can be found in previous publications. 8,32 The MOSCAPs were post-fabrication heat treated at 400 C for 15 min under forming gas (95% N 2 + 5% H 2 ) to activate the device and anneal out the defects. In situ spectroscopic ellipsometry (J.…”