ZrO2 film prepared by atomic layer deposition using less viscous cocktail CpZr[N(CH3)2]3/C7H8 precursor and ozone

An, Jong-Ki; Kim, Jin‐Tae; Kang, Goru; Oh, Nam Khen; Hahm, Sung−Ho; Lee, Geunsu; Park, In Sung; Yun, Ju‐Young

doi:10.1016/j.jallcom.2016.12.420

Cited by 10 publications

(8 citation statements)

References 36 publications

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“…The maximum intensity of the dominant peak of the tetragonal phase at 30.5° was obtained for the film grown at 250 °C and the small intensity of the peak at 28.2° from the monoclinic phase remained constant for films grown at 200 to 300 °C. These findings are consistent with our results; in particular, the dominant peak was observed at approximately 30.4°, regardless of whether it was assigned to tetragonal or cubic ZrO 2 [3]. …”

Section: Resultssupporting

confidence: 93%

“…The ZrO 2 dielectric films were prepared by ALD using CpZr(NMe 2 ) 3 /C 7 H 8 as the metal precursor and O 3 as an oxidant [3]. The CpZr(NMe 2 ) 3 /C 7 H 8 cocktail precursor was vaporized at 65 °C, and then introduced into the reaction chamber using Ar carrier gas through a gas line maintained at 100 °C.…”

Section: Methodsmentioning

confidence: 99%

“…These favorable properties have led to commercial use of ZrO 2 thin films as dielectrics and insulators in a variety of microelectronics applications, such as dynamic random access memory [2], radio-frequency and analog/mixed-signal (RF/AMS) integrated circuits [3,4], and non-volatile resistive random access memory [5]. …”

Section: Introductionmentioning

confidence: 99%

“…ALD has been widely used to fabricate ZrO 2 films for use as capacitor dielectrics [3,13]. ALD has been used to fabricate highly conformal coatings of various metal oxide films, such as SiO 2 , Y 2 O 3 , and HfO 2 , with thicknesses of the order of several to a hundred nanometers on complex three-dimensional capacitor structures with a high aspect ratio [14,15,16].…”

Section: Introductionmentioning

confidence: 99%

“…The metal precursor used for film growth requires sufficiently high vapor pressure, purity, and thermal and chemical stability, along with low viscosity and cost. A CpZr(NMe 2 ) 3 /C 7 H 8 cocktail precursor with low viscosity and high vapor pressure that meets these requirements has been reported [3]. Using this precursor, a high growth rate of 0.8–0.9 Å/cycle has been obtained over a wide temperature range of 250–400 °C.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

Chung

Kim

et al. 2018

Materials

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The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO2 films grown at temperatures from 250 to 350 °C were characterized. Stoichiometric ZrO2 films formed at 250–350 °C with an atomic ratio of O to Zr of 1.8–1.9 and a low content of carbon impurities. The film formed at 300 °C was predominantly the tetragonal crystalline phase, whereas that formed at 350 °C was a mixture of tetragonal and monoclinic phases. Electrical properties, such as capacitance, leakage current, and voltage linearity of TiN/ZrO2/TiN capacitors fabricated using the thin ZrO2 films grown at different temperatures were compared capacitor applications. The ZrO2 film grown at 300 °C exhibited low impurity content, predominantly tetragonal crystalline structure, a high dielectric permittivity of 38.3, a low leakage current of below 10−7 A/cm2 at 2 V, and low-voltage linearity.

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Section: Resultssupporting

confidence: 93%

Section: Methodsmentioning

confidence: 99%