1953
DOI: 10.1515/ijmr-1953-441004
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Zur Kristallchemie der B-Metalle

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Cited by 9 publications
(6 citation statements)
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“…69 GeTe crystallizes in the low temperature α-phase (space group R3m) which can be described as a distorted NaCl-type structure and transforms into the parent structure type (β-phase, space group Fm3 ˉm) in the temperature range from 390 to 460 °C depending on the actual composition. 70,71 Abrikosov et al reported the solubility of Bi 2 Te 3 in GeTe to be about 5%. 72 For the low temperature phase vacancies lead to the formation of planar defects which have been frequently observed and were attributed to vacancy layers.…”
Section: Transport Properties In Dependence Of Temperature and Therma...mentioning
confidence: 99%
“…69 GeTe crystallizes in the low temperature α-phase (space group R3m) which can be described as a distorted NaCl-type structure and transforms into the parent structure type (β-phase, space group Fm3 ˉm) in the temperature range from 390 to 460 °C depending on the actual composition. 70,71 Abrikosov et al reported the solubility of Bi 2 Te 3 in GeTe to be about 5%. 72 For the low temperature phase vacancies lead to the formation of planar defects which have been frequently observed and were attributed to vacancy layers.…”
Section: Transport Properties In Dependence Of Temperature and Therma...mentioning
confidence: 99%
“…GeTe is a narrow band-gap semiconductor [3] and is ferroelectric at room temperature with a Curie temperature of about 705 K. The low temperature ferroelectric phase has a rhombohedraly distorted NaCl type crystal structure with the space group R3m [4][5][6][7][8]. Structural distortions involve relative displacement of the Ge and Te sublattices along the body cell diagonal and subsequent rhombohedral shear deformation along [111] direction which changes the rhombohedral angle from its fcc value of 60 • to α.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, varying the transition temperatures constitutes an intriguing aspect for optimizing the performance of GST bulk thermoelectrics by Se doping. Limitations are indicated by the fact that at ambient conditions GeSe crystallizes in a binary variant of the black phosphorus structure type while the structure of α-GeTe is a binary variant of the structure type of gray arsenic. Even though at HT both compounds exhibit a rocksalt-type structure, the ternary phase diagrams Ge/Sb/Te and Ge/Sb/Se are significantly different. There is no homologous series of layered compounds “Ge n Sb 2 Se 3+ n ” corresponding to those on the pseudo-binary line Sb 2 Te 3 /GeTe.…”
Section: Introductionmentioning
confidence: 99%