Zur Lumineszenz von Zinksiliziumphosphid

Abstract

Results of cathodoluminescence measurements of ZnSiP,-single crystals grown by different techniques are reported. The luminescence excited in the various samples showed considerable differences in intensity and spectral position. These differences are apparently caused by the irregular incorporation of recombination centres in the present stage of crystal growth. Samples grown by "vapour phase technique with ZnC1," and by "spontaneous crystallisation from Sn or Zn melt" showed line spectra typical for the special method of crystal growing. This relation between a typical line spectrum and the method of crystal growing chosen is attributed to the participation of intrinsic defects in the recombination processes. The detection of doping elements by means of luminescence measurements is discussed for ZnSiP, crystals doped by adding Te, Se, Ga, or I n to the Zn melt. EinfiihrungZnSiY, gehort zur Gruppe der ternaren A2B4c-Halbleiter niit Chalkopyritstruktur.