2021
DOI: 10.1021/acsami.1c17260
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β-Alanine-Anchored SnO2 Inducing Facet Orientation for High-Efficiency Perovskite Solar Cells

Abstract: SnO2 films as a promising electron transport layer (ETL) have been widely used in planar-type perovskite solar cells to achieve an impressive improvement in the conversion efficiency. However, compared with a mesoporous ETL, the interfacial charge carrier transfer of the SnO2 ETL is severely limited due to the issues of oxygen vacancy defects and crystal lattice mismatch between SnO2 and the perovskite, which generally leads to the growth of randomly stacked and porous perovskite layers and subsequently impact… Show more

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Cited by 22 publications
(14 citation statements)
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“…In addition to the electrical conductivity of SnO 19,31 The enlarged region (Figure 5b) of the C�O stretching vibration is observed to shift toward large wavenumbers, illustrating that oxalate ions truly interact with SnO 2 . 44,45 Likewise, a new stretching peak appears at 770.7 cm −1 in SnO 2 -Na and SnO 2 -K, which is defined as Sn-O-Na and Sn-O-K, respectively. The peak intensity of −OH in the FTIR spectra of the SnO 2 film is weakened.…”
mentioning
confidence: 99%
“…In addition to the electrical conductivity of SnO 19,31 The enlarged region (Figure 5b) of the C�O stretching vibration is observed to shift toward large wavenumbers, illustrating that oxalate ions truly interact with SnO 2 . 44,45 Likewise, a new stretching peak appears at 770.7 cm −1 in SnO 2 -Na and SnO 2 -K, which is defined as Sn-O-Na and Sn-O-K, respectively. The peak intensity of −OH in the FTIR spectra of the SnO 2 film is weakened.…”
mentioning
confidence: 99%
“…We further measured the trap density of the FAPbI 3 perovskite films without and with PZ treatment by the space‐charge‐limited‐current (SCLC) method. [ 39 ] As shown in Figure 3h, we constructed an electron‐only device with an architecture of FTO glass/SnO 2 /perovskite/PCBM/Au, and the trap density was determined by fitting the current‐voltage response plots using Equation . ntrapbadbreak=2ε0εVTFLeL2\[ \begin{array}{*{20}{c}}{{{\rm{n}}_{{\rm{trap}}}} = \frac{{2{\varepsilon _0}\varepsilon {{\rm{V}}_{{\rm{TFL}}}}}}{{e{L^2}}}}\end{array} \] where ε 0 is the vacuum permittivity, ε is the relative dielectric constant of the FAPbI 3 , V TFL is the onset trap voltage of the trap‐filled limit region, e is the elementary charge, and L is the thickness of corresponding perovskite film.…”
Section: Resultsmentioning
confidence: 99%
“…To further elucidate the charge carrier dynamics, time-resolved PL (TRPL) measurements were executed, and the results are displayed in Figure d. The charge carrier lifetime can be calculated by eq , that is, using a biexponential decay to fit the TRPL curve where τ 1 and τ 2 are related to interfacial charge carrier recombination and bulk recombination, respectively, representing fast and slow decay lifetime components; A 1 and A 2 refer to their decay magnitudes; and B is a given constant. , Equation is utilized to obtain the corresponding average carrier lifetime, denoted as τ ave . The τ 1 and τ 2 for the control perovskite film are 476.1 and 86.7 ns, respectively, resulting in an average lifetime of 252.3 ns, while for the IL-embedded perovskite film, the τ 1 and τ 2 improve to 782.0 and 140.9 ns, respectively, yielding an extended average lifetime, 431.4 ns, confirming the reduction of the trap density after the incorporation of IL.…”
Section: Resultsmentioning
confidence: 99%