γ-MnS films with 3D microarchitectures: comprehensive study of the synthesis, microstructural, optical and magnetic properties

Abstract

A simple procedure to synthesize 3D microarchitectures of γ-MnS films at low temperature is described in the present work.

Raman and EPR Characterization of Diluted Magnetic Semiconductor Sb2–xMnxS3 Nanocrystals Grown in a Glass Matrix

“…This result indicates that, at these concentrations, Mn saturation occurs in the Sb 2 S 3 structure and therefore the formation of MnS also occurred. 50,51 The Raman mode 3 A g , not observed in the Sb 2 S 3 NCs embedded in the SNAB glass matrix, becomes evident at x > 0.00, and its intensity increases with the variation of x from 0.05 to 0.20. This fact can be attributed to the decrease of the structural defects caused by the Sb 3+ -ion vacancy, which is occupied by Mn 2+ ions during the ionic diffusion process at 550 °C, as reported for a Mn-doped nanostructure system.…”

“…The band at around 188 cm –1 corresponds to the S–Sb–S bond. It is observed that this band undergoes a blueshift with increasing Mn concentration . This result gives strong indications of the substitution of Mn 2+ ions for Sb 3+ ions in the crystalline structure of Sb 2 S 3 due to the decrease of the atomic mass, thus causing an increase in the frequency of vibration.…”

“…For the TEM images in Figure 1e, according to the Raman spectroscopy data (Figure 3), for which x = 0.10, there may be the formation of MnS, 50,51 in addition to the presence of Bi 2−x Mn x S 3 NCs, in which the dispersion σ x=0.10 is greater than σ x=0.00 .…”

Carbon Nitride Supported Ultrafine Manganese Sulfide Based Nonvolatile Resistive Switching Device for Nibble-Sized Memory Application

“…The phase and purity of the hybrid product were characterized by the X-ray powder diffraction technique. Figure shows the XRD pattern of the product obtained from the precursors KMnO 4 and thiourea, treated at the temperature of 550 °C for 4 h. Most of the diffraction peaks were matched according to the JCPDS 40-1288 and 40-1289 and could be indexed as the hexagonal phase of γ - MnS. , The face-centered cubic phase of α-MnS (JCPDS 06-0518) also existed in trace amount in the sample . The XRD pattern also indicated the formation of manganese oxide (Mn 3 O 4 ) species during the reaction due to the contact of aerial oxygen, indexed in Figure .…”

Synthesis of stable γ-phase MnS1−xSex nanoflakes with inversion symmetry breaking

“…However, the controllable synthesis of the metastable phases of MnS/MnSe is still challenging, because they have low thermal stability and are easy to transform from a metastable phase into a stable phase at high temperature or under high pressure. 12,[17][18][19][20] Most research interest has been focused on the synthesis and electrical properties of MnS nanowires [21][22][23] and polycrystalline films, [24][25][26][27][28] while its non-centrosymmetric properties have been studied rarely. 12,17,18,29 In addition, because of the good substitutional solid solubility between S and Se atoms, the formation of ternary alloys through the S/Se site-substitution provides a platform to tune smart chalcogenide intrinsic physical properties, such as bandgap, 30 which reveals new perspectives in the search for new non-centrosymmetric materials with tunable properties.…”