Влияние Толщины Гидрогенизированных Углеродных Пленок, Легированных Кремнием И Кислородом, На Свойства Их Поверхности

Abstract

In this work, 0.5-7 µm thick a-C:H:SiOx films were obtained on silicon and VT6 ti-tanium alloy substrates in plasma of non-self-sustained arc discharge with a hot cathode using a bipolar pulsed substrate bias voltage. The dependence of hardness, internal stress-es, surface morphology, wettability, and the surface potential a-C:H:SiOx films on the thickness was studied. It is shown that increasing the film's thickness enhances the allow-able load on the material and its hardness. The a-C:H:SiOx films had low internal stresses (less than 600 MPa), and the contact angle with water was 75–80°. It is found that an in-crease in the film thickness leads to a rise in the negative surface potential from 50 to 670 mV.