Физика И Техника Полупроводников
 2017
DOI: 10.21883/ftp.2017.10.45025.8511
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Выращивание и свойства изопараметрических гетероструктур InAlGaPAs/GaAs

Д.Л. Алфимова1,
Л.С. Лунин2,
M.Л. Лунина3
et al.

Abstract: Обсуждаются результаты выращивания изопараметрических гетероструктур InAlGaPAs/GaAs. Исследова-ны состав, кристаллическое качество и люминесцентные свойства гетероструктур.

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