Дефекты С Глубокими Уровнями В Фотоэлектрическом Преобразователе С Антиотражающей Пленкой Пористого Кремния, Сформированной Окрашивающим Химическим Травлением

Abstract

Defects in the semiconductor structure of a photovoltaic converter (PVC) with a p – n junction and antireflection film of porous silicon manufactured using chemical stain etching were studied by the current deep-level transient spectroscopy technique. The influence of the regime of porous silicon film formation on the transformation of deep-level defects and the main PVC characteristics is explained.