Замена туннельных переходов в InP на каналы проводимости с кристаллитами GaP

Abstract

The results of investigations by the method of Electron beam-induced current of p-n junctions based on InP with GaP crystallites in the space charge region are presented. It is shown that the introduction of crystallites into the space charge region leads to short-circuiting of the p-n junction. The quality of the material grown on top of the crystallites allows to create of photoactive regions, as evidenced by measurements of the photoluminescence spectra.