Замещение фосфора на поверхности InP(001) при отжиге в потоке мышьяка

Abstract

We report experimental study of the transformation of the epi-ready InP(001) surface during annealing in an arsenic flux. Using the RHEED method, it was shown that an InP1−xAsx layer is formed on the surface. The amount of arsenic substitution for phosphorus at different annealing temperatures was determined, which is 7% at an annealing temperature of 480◦C and increases to 41% with an increase in the annealing temperature to 540◦C. The annealing time has little effect on the degree of substitution.