2019
DOI: 10.21883/pjtf.2019.24.48797.18006
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Ионно-лучевое осаждение тонких пленок AlN на Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

Abstract: Thin AlN films were obtained by the ion-beam deposition method on sapphire substrates. Studies were carried out using scanning electron microscopy, Raman scattering and optical spectroscopy. Dependences of influence of the ion-beam deposition parameters (composition of gas mixture, energy of the ion beam) on morphology, structure and optical properties of the AlN films on sapphire were revealed.

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