Исследование Магниторезистивных Наноструктур С Магнитострикционным Эффектом Для Устройств Магнитной Стрейнтроники

Abstract

Представлены результаты экспериментальных исследований магнитострикционных и магниторезистивных свойств тонкопленочных многослойных наноструктур Ta/FeNiCo/CoFe/Ta и Ta/FeNiCo/CoFeВ/Ta на окисленных кремниевых подложках диаметром 100 мм. Экспериментально установлена зависимость величины анизотропного магниторезистивного эффекта от величины механических деформаций в экспериментальных образцах наноструктур. The paper presents the results of experimental studies of the magnetostriction and magnetoresistive properties of thin-film multilayer nanostructures Ta/FeNiCo/CoFe/Ta and Ta/FeNiCo/CoFeB/Ta on oxidized silicon substrates with a diameter of 100 mm. The dependence of the magnitude of the anisotropic magnetoresistive effect on the magnitude of mechanical strains in experimental samples of nanostructures has been experimentally established.

Investigation of Multilayer Nanostructures of Magnetic Straintronics Based on the Anisotropic Magnetoresistive Effect

“…After studying the nanostructures on the wafer, two types of samples 4 × 20 mm 2 were studied: in the first, the EMA was directed along the long side of the sample; in the second, the EMA was tilted at 45 • to the long side and measuring the magnitude of the AMR effect under conditions of varying mechanical load. The AMR effect was measured by a two-probe method-the unit has a device for creating controlled mechanical deformations in the surface layer of the sample [8,16,21]. The sketch of the main unit of the installation is shown in Figure 2.…”

“…Therefore, there is a special interest in studying nanostructures containing magnetoresistive and magnetostrictive materials in a certain ratio. Thin FeNiCo layers have a high anisotropic magnetoresistive (AMR) effect (~2-4%) and a low magnetostriction coefficient [8][9][10]. In the Co 50 Fe 50 layers, a low AMR effect (~0.3%) and a significant magnetostrictive effect are observed [8][9][10][11][12][13][14].…”

“…Thin FeNiCo layers have a high anisotropic magnetoresistive (AMR) effect (~2-4%) and a low magnetostriction coefficient [8][9][10]. In the Co 50 Fe 50 layers, a low AMR effect (~0.3%) and a significant magnetostrictive effect are observed [8][9][10][11][12][13][14].…”