Исследование явления токопрохождения в кристаллах EuGa-=SUB=-2-=/SUB=-S-=SUB=-4-=/SUB=-:Er-=SUP=-3+-=/SUP=-

Abstract

The results of studying the static current-voltage characteristics of EuGa2S4:Er3+crystals at room temperature are presented. The mechanism of current passage in them is revealed. The height of the potential barrier at the metal-semiconductor interface (0.9eV), the relative permittivity of crystals (3.1), and the concentration of traps (7.14 1016 cm-3) were calculated, and the shape of the potential well for the electrons trapped in the traps was determined.