The results of studying the static current-voltage characteristics of EuGa2S4:Er3+crystals at room temperature are presented. The mechanism of current passage in them is revealed. The height of the potential barrier at the metal-semiconductor interface (0.9eV), the relative permittivity of crystals (3.1), and the concentration of traps (7.14 1016 cm-3) were calculated, and the shape of the potential well for the electrons trapped in the traps was determined.

The excitation and photoluminescence spectra of composites based on PVDF and filler CaGa2S4:Eu2+ were not measured at room temperature. The photoluminescence spectra were analyzed at different concentrations of Eu2+ ions and it was found that the position of the maximum of the PL spectra does not change with an increase in the content of Eu2+ ions in the compound, and the maximum of the PL spectrum in all percentages is ~550 nm with the electronic transition 4f 65d1 → 4f 75d.