Низкочастотный шум в светодиодах на основе InGaN/GaN квантовых ям при электрических воздействиях, сопровождающихся возрастанием внешней квантовой эффективности

Abstract

The results of testing the degradation of LED structures with InGaN/GaN quantum wells are presented. An increase in the external quantum efficiency above the initial value was observed after passing a current of 150–170 mA. Possible physical processes leading to a change in quantum efficiency and an increase in low-frequency noise are considered.