Транспортные свойства пленок графена, выращенных методом термодеструкции поверхности SiC (0001) в среде аргона

Lebedev, S. P.; Eliseyev, I. A.; Davydov, V. I.; Smirnov, A. N.; Левицкий, В. С.; Mynbaeva, M. G.; Kulagina, M. M.; Hähnlein, Bernd; Pezoldt, Jörg; Лебедев, А.А.

doi:10.21883/pjtf.2017.18.45035.16895

Cited by 4 publications

(1 citation statement)

References 10 publications

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“…В качестве подложки применялись высокоомные коммерческие пластины 4H-SiC. Для проведения исследований по травлению в атмосфере водорода и последующему росту графена была выбрана поверхность с ориентацией (0001) (Si-грань) подложки SiC, поскольку на данной поверхности формируется более равномерная и качественная пленка графена [8].…”

Section: экспериментunclassified

Исследование влияния водородного травления поверхности SiC на последующий процесс формирования пленок графена

Лебедев¹,

Barash²,

Eliseyev³

et al. 2019

Журнал Технической Физики

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The effect of temperature and duration of the 4H-SiC (0001) surface etching in hydrogen on the structural perfection of graphene films grown by the thermal destruction method was studied. Several technological regimes have been defined that allow etching of the substrate without changing the stoichiometric composition of the surface. It has been demonstrated that pre-growth etching in hydrogen at T = 1600 ° C for 1 min. allows one to obtain more uniform and structurally perfect graphene than etching at T = 1300 ° C for 30 minutes.

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Section: экспериментunclassified

Исследование влияния водородного травления поверхности SiC на последующий процесс формирования пленок графена

Лебедев¹,

Barash²,

Eliseyev³

et al. 2019

Журнал Технической Физики

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Electronic structure of multilayer allotropes of 2D silicon carbide

2019

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The transition from bulk material to low-dimensional structures (2D, 1D) is accompanied not only by the appearance of new electrophysical properties, but also by a change in the symmetry of the elementary lattice caused by the violation of longrange order in one or several crystallographic directions. Therefore, of a particular interest is the study of the phenomenon of allotropy in 2D and quasi-2D crystals. In the present work, on the basis of quantum chemical calculations from first principles, we studied the size-depended allotropy and the structure-dependent properties of low-dimensional silicon carbide (SiC), obtained on the basis of SiC monolayers with a stoichiometric composition of 1:1. It has been established that 2D allotropes of SiC form a family of semiconductor structures with a different band structure (both direct-band-and non-direct-bandsemiconductors) and charge properties. A deeper analysis of the geometric and energy parameters made it possible to establish the possibility of the sustainable existence of four topological 2D SiC types, differing in the way and order of alternation of layers, and the allotropic modifications obtained are not characteristic of bulk material. Accounting for the spatial separation of the charge as a result of the formation of a covalent polar bond between the carbon and silicon atoms that made up the structure allowed detecting the formation of an effective charge within the monolayer. After the analysis of the magnitude and sign of the specific surface charge, a correlation was established between this parameter and the geometry of the optimized structure. Thus, taking into account the charge properties of 2D SiC, it is possible to trace structural changes in the system, identify a specific allotrope, and establish the order in which the monolayers are laid. Characteristic patterns in the charge distribution are a prerequisite for the production of composite materials based on 2D allotropes of SiC.

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Сорбция Радия-226 На Малослойном Графене, Синтезированном В Условиях Самораспространяющегося Высокотемпературного Синтеза

Возняковский,

Кидалов

et al. 2024

Kolloidnyj žurnal

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Транспортные свойства пленок графена, выращенных методом термодеструкции поверхности SiC (0001) в среде аргона

Cited by 4 publications

References 10 publications

Исследование влияния водородного травления поверхности SiC на последующий процесс формирования пленок графена

Исследование влияния водородного травления поверхности SiC на последующий процесс формирования пленок графена

Electronic structure of multilayer allotropes of 2D silicon carbide

Сорбция Радия-226 На Малослойном Графене, Синтезированном В Условиях Самораспространяющегося Высокотемпературного Синтеза

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