Формирование InAs/GaP-гетероструктур с квантовыми ямами на подложках кремния методом молекулярно-лучевой эпитаксии

Abstract

Possibility of formation of pseudomorphous quantum well consisting of InGaAsP quaternary alloy during InAs deposition on GaP/Si epitaxial film surface with developed relief is demonstrated. Investigations of quantum well were performed by transmission electron microscopy and spectroscopy of cw photoluminescence. The appearance of quantum well segments of 2 types with different width and composition InGaAsP is demonstrated. Width increasing is accompanied by decreasing of In and As atoms fraction. Lateral sizes of quantum well segments are not lower than 20 nm. Different photoluminescence bands are corresponds to quantum well segments. Observed phenomenon are explained in the framework of suggestion about strain induced surface reorganization during InAs heteroepitaxy on terraced GaP surface.