高温領域まで拡張した高信頼SiCダイアタッチメント

Tanimoto, Satoshi; Watanabe, Kinuyo; Tanisawa, Hidekazu; Matsui, Kohei; Sato, S.

doi:10.7791/jspmee.2.144

Cited by 4 publications

(10 citation statements)

References 8 publications

(1 reference statement)

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“…Long-term thermal stability of CBKRs in air was evaluated using the samples, which were attached to a ceramic package, as shown in Fig. 4, with gold-germanium solder to withstand extreme temperature storage and temperature change of the thermal-shock test 41) .…”

Section: Experimental Methodsmentioning

confidence: 99%

Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

Masunaga

Crescitelli

Funaki

2020

Jpn. J. Appl. Phys.

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Long-term thermal stability of specific contact resistance (ρc) in cross-bridge kelvin resistors (CBKRs), with an Al/TiN/Ti/Ni2Si/4H-SiC layered structure was studied. In hightemperature-storage tests at 500°C, ρc of p-type SiC increased after it decreased to 1/100 from its initial value; however, in high-temperature-storage tests at 300°C, it was stable up to 1000 hr. The initial decline of ρc was due to formation of titanium-silicide alloy, whose barrier height is lower than that of Ni2Si phase. It was found that ρc increased when the aluminum electrode disappeared because aluminum displaced silicon in the silicon-dioxide layer. In thermal-shock tests (-40°C/300°C), ρc hardly changed up to 2000 cycles, and that trend was constant regardless of SiC carrier type. In both tests, almost no thermal deterioration of ρc around 300°C was observed even in air, so it is concluded that the CBKR structure is robust enough for installation in a high-temperature environment such as a nuclear power plant under decommissioning.

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Section: Experimental Methodsmentioning

confidence: 99%

Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

Masunaga

Crescitelli

Funaki

2020

Jpn. J. Appl. Phys.

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“…Typically, 63 high-temperature applications with Au-Ge have aimed 64 for use up to around 300°C. [8,9,11,12,17,19,20,22,[26][27][28][29][30][31][32][33] But, 65 joints have also been explored for cryogenic tempera-66 tures down to around À 170°C. [15,26,32,33] Au-Ge joints 67 have been evaluated as materials for die-attach purposes 68 in numerous devices and configurations and various 69 other uses in recent years.…”

Section: Introductionmentioning

confidence: 99%

“…[15,26,32,33] Au-Ge joints 67 have been evaluated as materials for die-attach purposes 68 in numerous devices and configurations and various 69 other uses in recent years. Applications include silicon 70 carbide (SiC) power devices, [10,19,28,[34][35][36] SiC 71 diodes, [10,[18][19][20]26,29,32,33,35] SiC dummy dies, [15,30,31] Si 72 dummy dies, [8,9,11,12,17,22] microwave circuit, [27] MEMS 73 device, [37] for wafer bonding, [37] creating nanowires, [38] 74 forming ohmic contacts, [6,39] and hermetic seals [40,41] to 75 mention some. Ceramic substrates (circuit boards) have 76 most commonly been the substrate of choice in the 77 evaluated systems.…”

Section: Introductionmentioning

confidence: 99%

“…Ceramic substrates (circuit boards) have 76 most commonly been the substrate of choice in the 77 evaluated systems. In particular, substrates of silicon 78 nitride (Si 3 N 4 ) [12,15,17,20,30,31,[34][35][36] or alumina 79 (Al 2 O 3 ) [10][11][12]18,27,28] have been used. Other ceramic 80 substrates include AlN [15,19] and BeO.…”

Section: Introductionmentioning

confidence: 99%

“…Studies have compared Au-Ge joints with 443 other binary Au-based alloys. It has been shown that 444 Au-Sn alloys are more corrosion-resistant than Au-Ge [10,22,30,31,35,36] Dashed lines are curve fits for each series.…”

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confidence: 99%

See 2 more Smart Citations

A Review of Eutectic Au-Ge Solder Joints

Larsson

Tollefsen

Løvvik

et al. 2019

Metall Mater Trans A

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Gold-germanium (Au-Ge) joints have been part of the electronics industry since the birth of the solid state transistor. Today they find their role as a reliable joining technology, especially for high-temperature applications. This article is a literature study reviewing Au-Ge joints: Their uses, properties, material compatibility, application techniques, and performance characteristics. The review concludes that it is possible to create high-quality and very strong Au-Ge joints with a shear strength up to 150 MPa. They are stable and reliable, showing limited degradation after thousands of hours at high temperature and thousands of thermal cycles. Joints may be used in low-stress applications up to 300°C.

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Packaging Techniques for Compact SiC Power Modules Operable in an Extended Tj Range

Tanimoto

Watanabe²,

Tanisawa

et al. 2013

ECS Trans.

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Packaging technology applicable to SiC power devices operated in an extended junction temperature range (Tjmax > 200°C) must be developed in order to create much more compact and cost-effective SiC power modules. This paper describes some of the technical challenges involved in improving the reliability of the critical package components—die attachment system, Al wire bonds and encapsulation—in direct contact with SiC devices inside the power module. Two numerical targets, (I) 3000 hours for a storage test at 250°C and (II) 3000 cycles for thermal cycling between -40°C and 250°C, were achieved through optimization and various improvements.

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高温領域まで拡張した高信頼SiCダイアタッチメント

Cited by 4 publications

References 8 publications

Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

A Review of Eutectic Au-Ge Solder Joints

Packaging Techniques for Compact SiC Power Modules Operable in an Extended Tj Range

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