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In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAsGaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T 0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.Index term -GaInNAs, long wavelength lasers, quantum well.

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This paper presents design and characterization of high performance multioxide 970nm InGaAs/AlGaAs MQWs verticalcavity surface-emitting lasers (VeSELs). Micro-optical components can modify the free-space optical properties of VeSELs for various applications such as illumination purposes, beam profiling in sensing applications and fiber coupling to transceiver modules. However, careful adjustment of material parameters leads to an excellent characterization results. The threshold current, heat flux, strained quantum-well gain, wave intensity at the laser facet and kink-free L-I curve have been obtained in the current design and presented in this communication.The various analyses demonstrate that the multi-oxide layer VeSEL improves the device performance.

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