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This work demonstrates the electrodeposition of cuprous oxide (Cu 2 O) thin films onto a fluorine-doped tin oxide (FTO)-coated conducting glass substrates from Cu(II) sulfate solution with C 6 H 8 O 7 chelating agent. During cyclic voltammetry experiences, the potential interval where the electrodeposition of Cu 2 O is carried out was established. The thin films were obtained potentiostatically and were characterized through different techniques. From the Mott-Schottky measurements, the flat-band potential and the acceptor density for the Cu 2 O thin films are determined. All the films showed a p-type semiconductor character with a carrier density varying between 2.41 × 10 18 cm −3 and 5.38 × 10 18 cm −3 . This little difference is attributed to the increase of the stoichiometric defects in the films with the deposition potential. Atomic force microscopy analysis showed that the Cu 2 O thin films obtained at high potential are more homogenous in appearance and present lower crystallites size. X-ray diffraction measurements indicate a cubic structure with good crystallization state and the deposition potential was found to have an influence on the size of the crystallites. The optical measurements show a direct band gap between 2.07-2.49 eV depending on the applied potential.

Metal oxide p–n heterojunctions consisting of p-Cu2O/n-ZnO/n-ZnS nanostructures were deposited on an ITO substrate by three-step electrodeposition.