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Point defects induced by electron-beam irradiation introduce new recombination centers in the band-gap determining the free carrier lifetime reduction. This effect is successfully used in reduction the switching time of semiconductor devices. Our work presents a model for the free carrier lifetime in silicon that takes into account the influence of concentration and energy level of the recombination centers induced by electronbeam irradiation. The irradiation was made on silicon diodes in a 7 MeV accelerator, in different dose and temperature conditions. The simulation procedure consists in modeling the primary defect generation and rescaling the primary defect projile as a function of irradiation temperature. Than carrier lifetime is deduced by using the Shockley-Read-Hall statistics and an experimental database.

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