A: DEPFET Active Pixel Sensors (APS) have been introduced as focal plane detectors for X-ray astronomy already in 1996. Fabricated on high resistivity, fully depleted silicon and back-illuminated they can provide high quantum efficiency and low noise operation even at very high read rates. In 2009 a new type of DEPFET APS, the DSSC (DEPFET Sensor with Signal Compression) was developed, which is dedicated to high-speed X-ray imaging at the European X-ray free electron laser facility (EuXFEL) in Hamburg. In order to resolve the enormous contrasts occurring in Free Electron Laser (FEL) experiments, this new DSSC-DEPFET sensor has the capability of nonlinear amplification, that is, high gain for low intensities in order to obtain singlephoton detection capability, and reduced gain for high intensities to achieve high dynamic range for several thousand photons per pixel and frame. We call this property "signal compression".Starting in 2015, we have been fabricating DEPFET sensors in an industrial scale CMOS foundry maintaining the outstanding proven DEPFET properties and adding new capabilities due to the industrial-scale CMOS process. We will highlight these additional features and describe the progress achieved so far. In a first attempt on double-sided polished 725 µm thick 200 mm high resistivity float zone silicon wafers all relevant device related properties have been measured, such as leakage current, depletion voltage, transistor characteristics, noise and energy resolution for X-rays and the nonlinear response. The smaller feature size provided by the new technology allows for an advanced design and significant improvements in device performance. A brief summary of the present status will be given as well as an outlook on next steps and future perspectives.

By combining a low noise fully depleted pnCCD detector with a columnar CsI(Tl) scintillator an energy dispersive spatial resolving detector can be realized with a high quantum efficiency in the range from below 0.5 keV to above 150 keV. The used scintillator system increases the pulse height of gamma-rays converted in the CsI(Tl), due to focusing properties of the columnar scintillator structure by reducing the event size in indirect detection mode (conversion in the scintillator). In case of direct detection (conversion in the silicon of the pnCCD) the relative energy resolution is 0.7% at 122 keV (FWHM = 850 eV) and the spatial resolution is less than 75 μm. In case of indirect detection the relative energy resolution, integrated over all event sizes is about 9% at 122 keV with an expected spatial precision of below 75 μm.

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Recent developments in the field of new materials and composites have been pushing for more powerful instrumentation in electron microscopy (EM). Besides the excellent spatial resolution needed to resolve nanoscale structures, the analytical capabilities of the instrument for revealing the composition are also very important.

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