The control of discrete quantum states in solids and their use for quantum information processing is complicated by the lack of a detailed understanding of the mechanisms responsible for qubit decoherences [1]. For spin qubits in semiconductor quantum dots, phenomenological models of decoherence currently recognize two basic stages [2-4]; fast ensemble dephasing due to the coherent precession of spin qubits around nearly static but randomly distributed hyperfine fields (∼ 2 ns) [5-8] and a much slower process (> 1 µs) of irreversible relaxation of spin qubit polarization due to dynamics of the nuclear spin bath induced by complex many-body interaction effects [9]. We unambiguosly demonstrate that such a view on decoherence is greatly oversimplified; the relaxation of a spin qubit state is determined by three rather than two basic stages. The additional stage corresponds to the effect of coherent dephasing processes that occur in the nuclear spin bath that manifests itself by a relatively fast but incomplete non-monotonous relaxation of the central spin polarization at intermediate (∼ 750 ns) timescales. This observation changes our understanding of the electron spin qubit decoherence mechanisms in solid state systems.

Free-standing semiconductor nanowires in combination with advanced gate-architectures hold an exceptional promise as miniaturized building blocks in future integrated circuits. However, semiconductor nanowires are often corrupted by an increased number of close-by surface states, which are detrimental with respect to their optical and electronic properties. This conceptual challenge hampers their potentials in high-speed electronics and therefore new concepts are needed in order to enhance carrier mobilities. We have introduced a novel type of core-shell nanowire heterostructures that incorporate modulation or remote doping and hence may lead to high-mobility electrons. We demonstrate the validity of such concepts using inelastic light scattering to study single modulation-doped GaAs/Al0.16Ga0.84As core-multishell nanowires grown on silicon. We conclude from a detailed experimental study and theoretical analysis of the observed spin and charge density fluctuations that one- and two-dimensional electron channels are formed in a GaAs coaxial quantum well spatially separated from the donor ions. A total carrier density of about 3 × 10(7) cm(-1) and an electron mobility in the order of 50,000 cm(2)/(V s) are estimated. Spatial mappings of individual GaAs/Al0.16Ga0.84As core-multishell nanowires show inhomogeneous properties along the wires probably related to structural defects. The first demonstration of such unambiguous 1D- and 2D-electron channels and the respective charge carrier properties in these advanced nanowire-based quantum heterostructures is the basis for various novel nanoelectronic and photonic devices.

Pulsed resonant fluorescence is used to probe ultrafast phonon-assisted exciton and biexciton preparation in individual self-assembled InGaAs quantum dots. By driving the system using large area (≥ 10π) near resonant optical pulses, we experimentally demonstrate how phonon mediated dissipation within the manifold of dressed excitonic states can be used to prepare the neutral exciton with a fidelity ≥ 70%. By comparing the phonon-assisted preparation with resonant Rabi oscillations we show that the phonon-mediated process provides the higher fidelity preparation for large pulse areas and is less sensitive to pulse area variations. Moreover, by detuning the laser with respect to the exciton transition we map out the spectral density for exciton coupling to the bulk LA-phonon continuum. Similar phonon mediated processes are shown to facilitate direct biexciton preparation via two photon biexciton absorption, with fidelities > 80%. Our results are found to be in very good quantitative agreement with simulations that model the quantum dot-phonon bath interactions with Bloch-Redfield theory.Due to their discrete electronic structure and strong interaction with light, self-assembled quantum dots (QDs) are often described as artificial atoms in the solid state. Indeed, many quantum optical experiments have recently been performed that exploit these atom-like properties; specific examples including deterministic single [11][12][13]. Moreover, in cavity QED experiments [14] remarkable effects such as photonblockade or photon-tunneling have opened the way to exploit QDs to generate novel quantum states of light [15]. In all these experiments, the solid state environment of the QDs manifests itself primarily in coupling to acoustic phonons -an effect that is unwanted since it results in decoherence of the quantum state, particular examples include incoherent population transfer between a QD and a detuned microcavity mode [16] or intra-molecular tunneling in vertically stacked QD-molecules [17,18]. Moreover, in coherent optical exciton control experiments, coupling to acoustic phonons dominates the damping of Rabi oscillations [19,20], limiting state preparation and control fidelities and the scope for possible applications. However, in other cases the coupling to acoustic phonons was exploited instead, e.g. for the high-fidelity spin initialisation by tunnel ionisation [21] or for achieving population inversion in electrically driven quantum dots [22]. Recently, Glässl et al. [23] proposed that high-fidelity preparation of excitonic states could be achieved by exploiting the coupling of the dressed excitonic states to a quasi continuum of vibrational modes. Their approach involves to combining the relative advantages of both Rabi oscillations and rapid adiabatic passage [24,25] by making use of phonon-mediated relaxation in the presence of a strong, near resonant pulsed optical field.In this paper we investigate the phonon-assisted preparation of neutral exciton (X 0 ) and biexciton (2X) states in QDs using pulsed resonant...