Modulation-doped In0.5Ga0.5As/In0.5Al0.5As quantum well structures grown by molecular beam epitaxy on GaAs substrates using a relaxed AlGaAsSb buffer showed carrier mobilities of 8500 cm2/V s for a sheet concentration of 3.5×1012 cm−2 at room temperature. The crystallinity of the quaternary buffer layer was verified by x-ray diffractometry. Transistors with 0.25×100 μm2 gates demonstrated transconductance values as high as 800 mS/mm. S-parameter measurements revealed a cutoff frequency fT of 87 GHz and a maximum oscillation frequency fMAX of 140 GHz (both extrinsic values).

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High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering APL Materials 4, 086103 (2016);

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