Characterization of MOVPE grown InPSb/InAs heterostructures

Drews, D.; Schneider, Andreas; Werninghaus, T.; Behres, A.; Heuken, M.; Heime, K.; Zahn, Dietrich R. T.

doi:10.1016/s0169-4332(97)00549-7

Cited by 22 publications

(14 citation statements)

References 7 publications

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“…101,166,201,579,580,[583][584][585][586] The study by Jou et al 579 of alloys with a range of compositions ap-pears to be the most useful. A recent experiment 587 obtained an energy gap of 0.48 eV for InP 0.69 Sb 0.31 lattice matched to an InAs substrate, which implies an even larger value of the bowing parameter. Although further work will be needed to establish complete confidence, our recommended direct-gap bowing parameter is Cϭ1.9 eV.…”

Section: Inpsbmentioning

confidence: 91%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,670

289

3,822

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, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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Section: Inpsbmentioning

confidence: 91%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,670

289

3,822

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“…The Raman spectra of InAsSb, InPSb and InPAs III-V ternary alloys have been thoroughly investigated [13][14][15]. However, previous Raman studies on III-V quaternaries have focussed more on gallium containing compounds, such as GaInAsSb [16][17].…”

Section: Introductionmentioning

confidence: 99%

Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE

Cheetham¹,

Krier²,

Patel³

et al. 2011

J. Phys. D: Appl. Phys.

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The Raman spectra of quaternary InAs x Sb y P1−x−y epitaxial layers nominally lattice-matched to (1 0 0) n-type InAs substrates are reported. The phonon peaks are identified for alloys covering a wide composition range extending into the miscibility gap. Three-mode behaviour was obtained across part of the composition range. InP-like longitudinal optical (LO) and transverse optical (TO) phonons were observed over the entire compositional range, but InAs-like LO phonons were only observed at high arsenic concentrations and no InSb-like TO phonons were observed. Disorder-related phonon peaks were obtained for alloy compositions within the miscibility gap.

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“…The vibration energy of 0.022 eV is smaller but close to the energies of InSb-like longitudinal optical ͑LO͒ phonons in InPSb that is lattice-matched to InAs ͑0.024 eV͒. 15 The small energy difference between the vibration mode and the InSb-like LO phonon mode of the host lattice implies that the Coulomb field induced by the defect charge has a slight effect on the lattice vibration, which explains the small Huang-Rhys factor. 16 Figure 5 shows the integrated intensity of the E 2 band as a function of temperature.…”

Section: -2mentioning

confidence: 72%

Photoluminescence of InAs0.04P0.67Sb0.29

Tsai

Wang

Lin

2008

Journal of Applied Physics

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We report the results of a detailed photoluminescence ͑PL͒ study on quaternary InAs 0.04 P 0.67 Sb 0.29 grown by gas-source molecular-beam epitaxy. The main PL peak at 10 K shows a transition energy that is lower than the calculated energy gap by 0.223 eV, which is attributed to the tail states recombination. Another PL band, which emerges as the temperature increases, is assigned to the self-activated luminescence from defect centers. Its features, namely, nearly temperature-independent peak energy, Gaussian-like lineshape, and square-root-oftemperature-dependent linewidth, can be illustrated by the configuration coordinate model. The vibration energy, calculated from the linewidth at low temperature, is 0.022 eV for the excited state of the defect centers. The self-activated luminescence shows a thermal quenching behavior that is usually exhibited by amorphous semiconductors, indicating that the defects are related to the compositional disorder. The defects responsible for the luminescence are most likely complexes consisting of a substitutional carbon and an In vacancy.

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Characterization of MOVPE grown InPSb/InAs heterostructures

Cited by 22 publications

References 7 publications

Band parameters for III–V compound semiconductors and their alloys

Band parameters for III–V compound semiconductors and their alloys

Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE

Photoluminescence of InAs0.04P0.67Sb0.29

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Characterization of MOVPE grown InPSb/InAs heterostructures

Cited by 22 publications

References 7 publications

Band parameters for III–V compound semiconductors and their alloys

Band parameters for III–V compound semiconductors and their alloys

Raman scattering in InAsxSbyP1−x−y alloys grown by gas source MBE

Photoluminescence of InAs0.04P0.67Sb0.29

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Product

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Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE