Formation of a well-passivated boron emitter for mass production of low-cost and high-efficiency n-type silicon solar cells is a major challenge in the photovoltaic industry. In this letter, we report on a novel and commercially viable method, inkjet printing, to create boron emitters. Phosphorus diffusion was used on the rear to form a back-surface field in conjunction with chemically grown oxide/silicon nitride (SiN x ) stack on the front and back for surface passivation. Finally, front and back screen-printed contacts were formed through the dielectric stacks to fabricate large-area (239 cm 2 ) n-type cells. This technology resulted in 19.0%-efficient p + -n-n + cells with a V oc of 644 mV, a J sc of 38.6 mA/cm 2 , and a fill factor of 76.3%. This demonstrates for the first time the promise of boron-inkjet-printing technology for low-cost and high-performance n-type Si cells.

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Formation of boron emitters for mass production of lowcost and high efficiency n-type silicon solar cells is a major challenge in the PV industry. In this paper, we report on the successful fabrication of high efficiency screen-printed 19.3% n-type silicon cell with V oc of 646 mV, J sc of 39.4 mA/cm 2 , and FF of 75.6 %, using boron dopant ink applied by inkjet printing to create boron-doped emitter. The detailed internal quantum efficiency (IQE) analysis showed excellent front surface recombination velocity (FSRV) of 15,000 cm/s and back surface recombination velocity (BSRV) of 66 cm/s. This demonstrates for the first time the promise of boron dopant ink for high performance n-type silicon solar cells.

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