Ga x In1−x As quantum wire heterostructures formed by straininduced laterallayer ordering

A GaxIn1−xP/Ga0.51In0.49P multiple-quantum-wire heterostructure was formed in situ through a strain induced lateral layer ordering process occurring spontaneously when (GaP)2/(InP)2 short period superlattices were grown on (100)-oriented on-axis GaAs substrates. Cross-sectional transmission electron microscopy estimated average quantum wire cross sections of ∼50 Å×100 Å leading to a high linear density of ∼100 wires/μm. The existence of the multiple-quantum wires is also supported by the strong anisotropy for two orthogonal polarizations in polarized photoluminescence measurements.