GaxIn1−xP multiple-quantum-wire heterostructures prepared by the strain induced lateral layer ordering process

Abstract

Ga x In1−x As quantum wire heterostructures formed by straininduced laterallayer ordering

The reduction and enhancement of spontaneous ordering in (InP)2/(GaP)2 quantum wells grown by solid source molecular beam epitaxy

“…Nevertheless, we believe that the growth of SPS structure can enhance the lateral composition modulation which resulted in the formation of periodic In-rich and Ga-rich regions in the growth plane, similar to the results observed in previous articles. 6,7,9 The PL peak energy corresponds to the dominant radiative recombination in the In-rich regions due to the fact that the regions with higher In content have lower band-gap energy. Therefore, the PL peak energies of all three (InP͒ 2 /͑GaP) 2 SPS samples are much lower than that of the In 0.5 Ga 0.5 P quantum well sample, although the average composition of the (InP͒ 2 /͑GaP) 2 SPS structure is equivalent to In 0.5 Ga 0.5 P. Figure 2 shows the results obtained from the 77 K polarized PL ͑PPL͒ spectra measured from the (InP͒ 2 /͑GaP) 2 SPS quantum wells grown on 0°and 15°tilted substrates.…”

Polarization anisotropy in room temperature contactless electroreflectance spectrum of self-organized lateral compositional superlattices

“…The cause of this composition modulation is still not well understood [1]. Transmission electron microscopy (TEM), energy-dispersed X-ray analysis (EDX) and polarized photoluminescence (PL) results have been put forth as evidence for the occurrence of composition modulation [3][4][5]. There is considerable interest in establishing the electronic band structure changes due to this composition modulation.…”

Linearly polarized and time-resolved cathodoluminescence study of strain-induced laterally ordered (InP)2/(GaP)2 quantum wires

“…4,5 Recently, QWRs have been fabricated by a strain-induced lateral ordering ͑SILO͒ process which occurs spontaneously when (GaP) n /(InP) n and (GaAs) n /(InAs) n short-period su-perlattices are grown on GaAs͑001͒ and InP͑001͒, respectively. [12][13][14][15][16][17][18][19][20] The SILO approach will be the focus of this article, which follows our recent report describing the observation of nonlinear optical properties of an ͑InP͒ 2 /͑GaP͒ 2 bilayer superlattice ͑BSL͒ structure. 17,18 A lateral modulation of the In and Ga compositions, by as much as ϳ30%, has been observed in transmission electron microscopy ͑TEM͒ and energy dispersive x-ray spectroscopy ͑EDS͒ studies.…”