Resonant tunnelling in n-type GaAs-(A1Ga)As double-barrier heterostructures with wide quantum wells is investigated as a function of magnetic field applied in the plane of the tunnel barriers. The evolution of the resonances in the current-voltage characteristics with magnetic field is used to study the transition from electric to magnetic confinement of electrons in the quantum well.

We experimentally investigate the influence of a high magnetic field parallel to the layers on the electron perpendicular transport in GaAs/AlAs superlattices. The key magnetoeffects are satisfactorily accounted for by a simple modified Esaki model of electronic conduction. These results provide an excellent confirmation of semi-classical miniband transport at room temperature in semiconductor superlattices.

A semi-classicai theon, of the non-linear miniband condLction n crossed electric and magnetic fields is presented The Bo.tzmann transport equation is solved with realrstic scattering mechanisms. i.e. electron-phonon scartering and interface potent al fluctuat;ons. The technique conssts of a characteristic solation of tne electron dynamics along tne free trajectories associated with an terative convergent algorithm. The main effect of the transverse magnetic field is interpreted n the frame of the Esaki-Tsu model by the modification of the free trajectories by the Lorentz force which repels t h e onset of Bragg scattering to higher electric f elds A direct comparison W th experimentalcurrent-voltage data is performed in taking into account the electric field inhomogeneity.

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