Picosecond and femtosecond spectroscopy allow the detailed study of carrier dynamics in nanostructured materials. In such experiments, a laser pulse normally excites several nanostructures at once. However, spectroscopic information may also be acquired using pulses from an electron beam in a modern electron microscope, exploiting a phenomenon called cathodoluminescence. This approach offers several advantages. The multimode imaging capabilities of the electron microscope enable the correlation of optical properties (via cathodoluminescence) with surface morphology (secondary electron mode) at the nanometre scale. The broad energy range of the electrons can excite wide-bandgap materials, such as diamond- or gallium-nitride-based structures that are not easily excited by conventional optical means. But perhaps most intriguingly, the small beam can probe a single selected nanostructure. Here we apply an original time-resolved cathodoluminescence set-up to describe carrier dynamics within single gallium-arsenide-based pyramidal nanostructures with a time resolution of 10 picoseconds and a spatial resolution of 50 nanometres. The behaviour of such charge carriers could be useful for evaluating elementary components in quantum computers, optical quantum gates or single photon sources for quantum cryptography.

The authors have studied In x Ga 1−x N / GaN ͑x Ϸ 15% ͒ quantum wells ͑QWs͒ using atomic force microscopy ͑AFM͒ and picosecond time resolved cathodoluminescence ͑pTRCL͒ measurements. They observed a contrast inversion between monochromatic CL maps corresponding to the high energy side ͑3.13 eV͒ and the low energy side ͑3.07 eV͒ of the QW luminescence peak. In perfect correlation with CL images, AFM images clearly show regions where the QW thickness almost decreases to zero. Pronounced spectral diffusion from high energy thinner regions to low energy thicker regions is observed in pTRCL, providing a possible explanation for the hindering of nonradiative recombination at dislocations.

Abstract:We present the first optical sensor based on Surface Plasmon Resonance (SPR) operating in the mid-infrared range. The experimental setup is based on a Kretschmann geometry with Ti/Au layers deposited on a CaF 2 prism where light excitation is provided by a Quantum Cascade Laser (QCL) source. Evidence of SPR is presented and the sensing capability of the system is demonstrated by using CO 2 and N 2 mixtures as test samples. Due to the absorption of CO 2 at this wavelength, it is shown that the sensitivity of this configuration is five times higher than a similar SPR sensor operating in the visible range of the spectrum.

Heteroepitaxial growth of Pb on the Ge(001) surface has been studied by He atom scattering. For low substrate temperatures, Pb is found to grow layer by layer with (111) orientation. A detailed analysis of the specular peak profile as a function of the He wave vector reveals that the step height of the growing monatomic terraces oscillates with the film thickness. This variation, initially as large as 615% around the value of the Pb(111) bulk interlayer spacing, gradually dampens out after the deposition of a dozen monolayers. This is direct evidence of quantum size effects affecting the interlayer distance of a growing metal film. [S0031-9007(97)

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