A comparative analysis of capacitance-voltage (C-V ) and current-voltage (I-V ) characteristics dependent on proton irradiation fluence in the range from 7·1012 to 7·10 14 p/cm 2 has been performed in float zone (FZ) silicon PIN diodes. A δ-shape and triangle profiles of radiation induced defects were formed by irradiation with protons having energy in the range from 2.0 to 2.7 MeV. Temperature-dependent variations of current (I-T ) at fixed reverse voltage VR enable one to extract the thermal activation parameters. These values are found to be in a quantitative agreement with trap activation parameters measured by DLTS technique. The role of point and extended defects in correlated modifications of C-V and I-V characteristics of the irradiated diodes is discussed.

Results of comparative study of deep level transient spectroscopy and of reverse recovery time (τRR) of PIN diodes with δ-and triangle-shape radiation defect distribution profiles are presented. FZ silicon PIN diodes were irradiated by varying proton fluence in the range of 10 13 -10 15 p/cm 2 and keeping fixed or gradually changing protons energy in the range of 2-2.7 MeV to introduce different profiles of radiation defects. Variations of the functional characteristics of PIN diodes containing different density of radiation defects and their distribution profiles are compared. Isochronous 24 h annealings in the temperature range of 80-400• C have been performed in order to suppress the detrimental carrier generation centres.