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We have used synchrotron-based critical dimension small-angle x-ray scattering (CD-SAXS) to monitor the impact of hydrogen annealing on the structural characteristics of silicon FinFET structures fabricated using self-aligned double patterning on both bulk silicon and silicon-on-insulator (SOI) substrates. H 2 annealing under different conditions of temperature and gas pressure allowed us to vary the sidewall roughness and observe the response in the two metrology approaches. In the case of the simpler bulk Si FinFET structures, the CD-SAXS measurements of the critical dimensions are in substantive agreement with the top-down critical dimension scanning electron microscopy metrology. Corresponding characterizations on SOI-based FinFET structures showed less agreement, which is attributed to the more complex structural model required for SOI FinFET CD-SAXS modeling. Because sidewall roughness is an important factor in the performance characteristics of Si FinFETs, we have compared the results of roughness measurements using both critical dimension atomic force microscopy (CD-AFM) and CD-SAXS. The measurements yield similar estimates of sidewall roughness, although the CD-AFM values were typically larger than those generated by CD-SAXS. The reasons for these differences will be discussed. Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 05/15/2015 Terms of Use: http://spiedl.org/terms

In this paper, the authors propose a new and intelligent method that is useful for the design of specific tools for rubber extrusion. The methodology developed can be used with several types of materials, such as rigid monocomponent profiles, monocomponent glass run channels, bior multi-component profiles, and so on. The underlying idea is that, in most cases, the basic problem lies in getting a proper shape in order to obtain the desired section of rubber and the correct properties. Obviously, the position of the shape changes as it depends on the type of product extruded (rigid rubber single profiles, monocomponent glass run channels, bi or multi-component profiles, and so on). Since the determination of the shape is a very complex task, the authors propose to use an expert system with rules based on the final aspect of the product, on an automatic procedure to select the right pattern' in order to apply the appropriate rules, and also on another automatic procedure to select the best function identifying the segment's correspondence between the pattern and the current product.