The magnitudes of the challenges facing electron-based metrology for post-CMOS technology are reviewed. Directed
selfassembly, nanophotonics/plasmonics, and resistive switches and selectors, are examined as exemplars of important post-CMOS
technologies. Materials, devices, and architectures emerging from these technologies pose new metrology requirements: defect
detection, possibly subsurface, in soft materials, accurate measurement of size, shape, and roughness of
structures for nanophotonic devices, contamination-free measurement of surface-sensitive structures, and identification of subtle
structural, chemical, or electronic changes of state associated with switching in non-volatile memory elements. Electron-beam
techniques are examined in the light of these emerging requirements. The strong electron-matter interaction provides measurable
signal from small sample features, rendering electron-beam methods more suitable than most for nanometer-scale metrology, but as
is to be expected, solutions to many of the measurement challenges are yet to be demonstrated. The seeds of possible solutions are
identified when they are available.