Temperature dependences of the high-field electron trapping in a Si02 thin film for temperature ranging from 100 to 423K are investigated. It is found that in the investigated temperature range, when the temperature decreases the effective surface density of the electron traps in the film decreases; the energy levels of the effective electron traps at high field concentrate at very narrow energy range. The thermal generation rateis found to be 1 . 2 8 3~l O '~/ c m~. K andits activation energyis 0.192eV. Based on these results, a model for the electron traps generated at high field in thin oxide is proposed.

The paper proposes a method for constructing an asymptotic solution of the singularly perturbed Cauchy problem in the case of violation of the stability conditions of the spectrum of the limit operator. In particular, we consider the problem with a turning point where eigenvalues "stick together" at t = 0.

A formula for the lower bound on the deuteron D-state probability is derived. This bound is shown to be an improvement on that recently obtained by Klarsfeld, Martorell and Sprung.

No abstract

By Lomov’s S.A. regularization method, we constructed an asymptotic solution of the singularly perturbed Cauchy problem in a two-dimensional case in the case of violation of stability conditions of the limit-operator spectrum. In particular, the problem with a ”simple” turning point was considered, i.e., one eigenvalue vanishes for t = 0 and has the form t m / n a ( t ) (limit operator is discretely irreversible). The regularization method allows us to construct an asymptotic solution that is uniform over the entire segment [ 0 , T ] , and under additional conditions on the parameters of the singularly perturbed problem and its right-hand side, the exact solution.