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Temperature dependences of the high-field electron trapping in a Si02 thin film for temperature ranging from 100 to 423K are investigated. It is found that in the investigated temperature range, when the temperature decreases the effective surface density of the electron traps in the film decreases; the energy levels of the effective electron traps at high field concentrate at very narrow energy range. The thermal generation rateis found to be 1 . 2 8 3~l O '~/ c m~. K andits activation energyis 0.192eV. Based on these results, a model for the electron traps generated at high field in thin oxide is proposed.

A formula for the lower bound on the deuteron D-state probability is derived. This bound is shown to be an improvement on that recently obtained by Klarsfeld, Martorell and Sprung.

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